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半導體量測技術 Semiconductor Materials and Device Characterization

半導體量測技術 Semiconductor Materials and Device Characterization Topic 7: time-of-flight technique and carrier mobility Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University. Review and new topics: . Charge pumping method (p. 379)

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半導體量測技術 Semiconductor Materials and Device Characterization

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  1. 半導體量測技術 Semiconductor Materials and Device Characterization Topic 7: time-of-flight technique and carrier mobility Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University

  2. Review and new topics: • Charge pumping method (p. 379) • Haynes-Shockley experiment (time of flight) • Photoelectric effect (time of flight) • Introduction to mobility • Presentation: 12/29 = 3 students 01/05 = 5 students • Final exam: (3:00pm~5:30pm)

  3. Time-of-flight (drift mobility)

  4. QA

  5. Mobility • MOSFET mobility • Effective mobility • Field-effect mobility • Time-of-flight or drift mobility • Mobility and carrier velocity at high E-field

  6. D. K. Schroder, p. 540

  7. D. K. Schroder, p. 541

  8. D. K. Schroder, p. 541

  9. D. K. Schroder, p. 541

  10. D. K. Schroder, p. 542~543

  11. D. K. Schroder, p. 541 Continue to study p. 545

  12. D. K. Schroder, p. 547

  13. D. K. Schroder, p. 548

  14. D. K. Schroder, p. 549

  15. D. K. Schroder, p. 549

  16. Continue to study p. 551 D. K. Schroder, p. 550

  17. Review suggested • 8.4 8.5 • 8.6 8.8 • (in D. K. Schroder) *You are welcome to submit the above homework to get extra bonus for your semester grade!! **These questions are still in the range of final exam!!

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