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EE130/230A Discussion 3

EE130/230A Discussion 3. Peng Zheng. Conductivity of a Semiconductor.  p  [ q t mp / m p * ] is the hole mobility.  n  [ q t mn / m n * ] is the electron mobility. t mn ≡ average time between electron scattering events t mp ≡ average time between hole scattering events.

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EE130/230A Discussion 3

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  1. EE130/230A Discussion 3 PengZheng

  2. Conductivity of a Semiconductor p [qtmp/ mp*]is the hole mobility n [qtmn/ mn*]is the electron mobility • tmn≡ average time between electron scattering events • tmp≡ average time between hole scattering events EE130/230A Fall 2013

  3. Mobility Dependence on Doping Carrier mobilities in Si at 300K EE130/230A Fall 2013 Lecture 4, Slide 3

  4. Mobility Dependence on Temperature EE130/230A Fall 2013 Lecture 4, Slide 4

  5. Resistivity Dependence on Doping For n-type material: R.F. Pierret, Semiconductor Fundamentals, Figure 3.8 For p-type material: Note: This plot (for Si) does not apply to compensated material (doped with both acceptors and donors). EE130/230A Fall 2013 Lecture 4, Slide 5

  6. Recombination-Generation (R-G) of Carriers in Silicon EE130/230A Fall 2013

  7. Recombination Processes R.F. Pierret, Semiconductor Fundamentals, Figure 3.15 Direct R-G Center Auger Recombination in Si is primarily via R-G centers EE130/230A Fall 2013 Lecture 5, Slide 7

  8. Net Recombination Rate (General Case) For arbitrary injection levels, the net rate of carrier recombination is: EE130/230A Fall 2013 Lecture 5, Slide 8

  9. Electrostatics (Step PN Junction) Band diagram: Electrostatic potential: Electric field:

  10. electrostatic potential V(x) x electric field ɛ(x) x potential energy PE(x) x kinetic energy KE(x) x Carrier concentration x Electron drift-current density and the electron diffusion-current density x

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