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MCP Electrodes and End Spoiling

This document discusses MCP electrodes and the effects of end-spoiling, including spatial resolution, electron energy distribution, and gain. It also explores methods for controlling end-spoiling using RF-magnetron sputtering and thermal evaporation techniques.

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MCP Electrodes and End Spoiling

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  1. MCP Electrodes and End Spoiling Jeffrey Elam, Qing Peng, Anil Mane, Thomas Prolier, Joe Libera Argonne National Laboratory Large Area Photodetector Collaboration Meeting October 15, 2009

  2. MCP Structure pore • resistive coating (ALD) • emissive coating (ALD) • conductive coating (thermal evaporation or sputtering)

  3. RF Magnetron Sputtering System, AJA International ATC 2400 John Pearson, MSD Sputtering system Sample rotation Deposition chamber Load lock Sample transfer Arm

  4. RF Magnetron Sputtering on Au/Cr Electrodes We’re done, right? MCP+100nm AZO+Cr 5nm+Au 50nm Uncoated MCP MCP 100nm AZO No.

  5. Electrodes and End-Spoiling in MCPs b Endspoiling: h=b/d

  6. Importance of End Spoiling • End spoiling output side: • increases spatial resolution • decreases gain • trade-off: h~1-2 • Input side: • h~0.5-0.8 IEEE Trans Nucl. Sci. 19 (3) 74-84 1972

  7. Effect of End Spoiling on Electron Energy Distribution B (end spoiling) A B A • N(E) becomes more narrow as end spoiling increases

  8. Effect of End Spoiling on Electron Energy Distribution Simulations: h=0 h=0.5 h=1 h=3 • N(E) narrows as end spoiling increases

  9. Effect of End Spoiling on MCP Spatial Resolution • small increase in spatial resolution (10%) with 1.5 end-spoiling

  10. Effect of End Spoiling on MCP Spatial Resolution Simulations: h=0 h=0.5 h=1 h=3 • No systematic change in angle distribution with end-spoiling

  11. Effect of End-Spoiling on MCP Gain • Gain ~ (SEC) (L/z) • SEC=secondary electron coefficient • L=pore length • z=distance between collisions Since E field gradient=0 in electrode length h, no gain there Gain ~ (SEC) (L/z) exp(-0.65h) • Gain decreases with end-spoiling

  12. Effect of End-Spoiling on MCP Gain 100 h=1.2 h=2.2 h=3 10 h=4 Gain IEEE Trans Nucl. Sci. 19 (3) 74-84 1972 1 0.1 0.01 Voltage • Gain decreases with end-spoiling

  13. Controlling End-Spoiling RF-magnetron sputtered Ti and Cu in high aspect ratio trench http://www.electroiq.com • Sputtering is not “line-of-site” • Need to use evaporation

  14. Controlling End-Spoiling • h=atan(θ)

  15. Electrode Materials Ossy suggests: 200 nm Inconel 600, h=1-2. Inconel 600: Trademark of Special Metals Corporation Nichrome: Brand name, range of compositions Ni 72% Cr ~17% Fe ~10% Mn ~1% Ni ~80% Cr ~20%

  16. Thermal Evaporation System, BOC Edwards AUTO 306 Hau Wang, MSD

  17. Thermal Evaporation System, BOC Edwards AUTO 306 Hau Wang, MSD sample rotation motor ~200nm thermal evaporated NiCr on 33 mm ALD MCP (end-spoiling not controlled)

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