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Dr. Hank Lee Associate Professor Dept. of Nuclear Engineering Missouri S&T

Legend. Wafer. (a) (b) (c) (d). Collimator. Collimator. Ti (~50 n m). Si 3 N 4 . Copper (~1.8 m). SiO 2 (~5 m). Tungsten. N-UNCD(~250 n m). X-ray Target. X-ray Target.

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Dr. Hank Lee Associate Professor Dept. of Nuclear Engineering Missouri S&T

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  1. Legend Wafer (a) (b) (c) (d) Collimator Collimator Ti (~50 nm) Si3N4 Copper (~1.8 m) SiO2 (~5 m) Tungsten N-UNCD(~250 nm) X-ray Target X-ray Target Etched void for field emission Tungsten (~200nm) Titanium Si3N4 (~1 m) Photoresist Anode & Filter Anode & Filter Si-wafer Focusing Electrode Focusing Electrode (e) (f) (g) (h) N-UNCD Extraction Grid Extraction Grid SiO2 Copper Spacer Spacer (i) (j) (k) (l) Substrate Substrate UNCD Electron Emitter UNCD Electron Emitter Lead Shield Lead Shield • Lower X-ray intensity needed • Lower operational power • Lower absorbed dose. • No geometric distortion • Individually addressed pixels • High resolution X-ray imaging. Dr. Hank Lee Associate Professor Dept. of Nuclear Engineering Missouri S&T N-UNCD Could not remove all of SiO2 without Cu delaminating Si3N4 Tungsten • Base Cathode Electron Extraction Grid Completed FEA (Cathode & Grid) Microfabrication process FEA prototype: I-V Plots. FN plots (inset) • Lower X-ray intensity needed • Lower operational power • Lower absorbed dose. • No geometric distortion • Individually addressed pixels • High resolution X-ray imaging.

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