1 / 2

Local Electrode Atom Probe Analysis of Gallium Nitride Semiconductors Compounds Patrick Kung, University of Alabama Tusc

Local Electrode Atom Probe Analysis of Gallium Nitride Semiconductors Compounds Patrick Kung, University of Alabama Tuscaloosa, DMR 0907558.

devona
Download Presentation

Local Electrode Atom Probe Analysis of Gallium Nitride Semiconductors Compounds Patrick Kung, University of Alabama Tusc

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Local Electrode Atom Probe Analysis of Gallium Nitride Semiconductors CompoundsPatrick Kung, University of Alabama Tuscaloosa, DMR 0907558 AlInN is a promising semiconductor material which has the potential to enable more reliable transistors that can operate at high frequencies, high power densities and in a broad range of temperatures. We are investigating the use of a Local Electrode Atom Probe (LEAP), an emerging technique for semiconductors, to analyze the three-dimensional microstructure of AlInN semiconductors and investigate the presence indium phase segregation or composition fluctuation, a phenomenon that may arise due to the very diverse thermodynamics characteristics of constituent InN and AlN. Sample preparation methods and LEAP analysis were successfully established for baseline GaN semiconductor materials. Reconstructed image, based on data collected from atom probe analysis of GaN semiconductor sample shaped into a 50 nm radius tip, showing the distribution of gallium atoms in the specimen probed.

  2. Outreach to Underrepresented GroupsPatrick Kung, University of Alabama Tuscaloosa, DMR 0907558 During Summer 2010, a high school student and two undergraduate students from underrepresented groups have experienced research activities associated with semiconductor materials characterization with the PI and co-PI. PI and co-PI have also been instructors in a NSF sponsored workshop for Historically Black Colleges and Universities (HBCU) faculty and teachers, entitled “Introducing Science Faculty to Materials Science and Engineering”. This was held from June 6-25, 2010 at the University of Alabama and was attended by 19 faculty members from HBCU’s across the country. High school student (front-left) and undergraduate students who experienced research with the PI and co-PI during summer 2010. PI and co-PI after being instructors in a NSF sponsored workshop for HBCU faculty members in June 2010.

More Related