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Nanolithography And Nanofabrication ELEC 7950 Special Topics on Nanoscale Science and Technology Summer 2003 Y. Tzeng Professor, ECE Auburn University. http://personal.cityu.edu.hk/~appkchu/AP4120/5v.pdf. Intel’s lithography Roadmap.
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Nanolithography And Nanofabrication ELEC 7950 Special Topics on Nanoscale Science and Technology Summer 2003 Y. Tzeng Professor, ECE Auburn University
Intel’s lithography Roadmap www.intel.com/technology/itj/2002/volume06issue02/ art06_lithographyroadmap/p03_roadmap.htm
Sub-wavelength lithography www.intel.com/technology/itj/2002/volume06issue02/ art06_lithographyroadmap/p03_roadmap.htm
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
TeraHertz transistor with 15nm gate Transistor physics and material properties will not prevent continuing on the path of Moore’s Law for some years to come. The key issue will be the availability of lithography equipment that can pattern sub-50nm features, in high-volume applications, at affordable costs. www.intel.com/technology/itj/2002/volume06issue02/ art06_lithographyroadmap/p03_roadmap.htm
http://users.ece.gatech.edu/~alan/11-6-Mohanty-Extreme%20UV%20Litho.pdfhttp://users.ece.gatech.edu/~alan/11-6-Mohanty-Extreme%20UV%20Litho.pdf
http://users.ece.gatech.edu/~alan/11-6-Mohanty-Extreme%20UV%20Litho.pdfhttp://users.ece.gatech.edu/~alan/11-6-Mohanty-Extreme%20UV%20Litho.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://users.ece.gatech.edu/~alan/11-6-Mohanty-Extreme%20UV%20Litho.pdfhttp://users.ece.gatech.edu/~alan/11-6-Mohanty-Extreme%20UV%20Litho.pdf
http://users.ece.gatech.edu/~alan/11-6-Mohanty-Extreme%20UV%20Litho.pdfhttp://users.ece.gatech.edu/~alan/11-6-Mohanty-Extreme%20UV%20Litho.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://users.ece.gatech.edu/~alan/11-6-Mohanty-Extreme%20UV%20Litho.pdfhttp://users.ece.gatech.edu/~alan/11-6-Mohanty-Extreme%20UV%20Litho.pdf
Intel adopts the following strategy: • Rapid transition to each new generation of lithography equipment, i.e. shorter wavelengths. • Using fast (high-run-rate) lithography tools. • Reusing lithography equipment over multiple process generations. • Intel expects that this strategy will allow lithography to continue to be affordable into the 45nm technology generation and beyond. www.intel.com/technology/itj/2002/volume06issue02/ art06_lithographyroadmap/p03_roadmap.htm
X-Ray Lithography http://personal.cityu.edu.hk/~appkchu/AP4120/5v.pdf
Electron Beam Lithography http://personal.cityu.edu.hk/~appkchu/AP4120/5v.pdf
Focused Ion Beam Lithography http://personal.cityu.edu.hk/~appkchu/AP4120/5v.pdf
Atom Optics G. Timp, R.E. Behringer, D.M. Tennant, J.E. Cunningham, M. Prentiss and K.K. Berggren, “Using Light as a Lens for Submicron, Neutral-Atom Lithography,” Physical Review Letters 69(11), 14 September 1992. http://www.iap.uni-bonn.de/ag_meschede/atomoptik/nist.pdf
AFM images http://www.iap.uni-bonn.de/ag_meschede/atomoptik/nist.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf
http://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdfhttp://www-inst.eecs.berkeley.edu/~ee143/f2002/Lectures/Lec_28.pdf