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In this paper, the EL spectral intensity is investigated in

In this paper, the EL spectral intensity is investigated in the super-bright green InGaN single-quantum-well (SQW) LEDs over a wide temperature range and as a function of wide injection current level to exploit what causes variations of the carrier capture efficiency. Experiments.

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In this paper, the EL spectral intensity is investigated in

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  1. In this paper, the EL spectral intensity is investigated in the super-bright green InGaN single-quantum-well (SQW) LEDs over a wide temperature range and as a function of wide injection current level to exploit what causes variations of the carrier capture efficiency.

  2. Experiments InGaN SQW Green LED p p-GaN p-Al0.2Ga0.8N （SQW） n n-GaN GaN buffer layer c-plane Sapphire

  3. Results and Discussion @ 0.1mA Fig. 1. Current–voltage characteristics of the green InGaN SQW diode as a function of temperature between 20 and 300 K.

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