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PREAMBLE OF ELECTRONICS ENGINEERING [EEC-101/201]. INDEX. PREAMBLE STRUCTURE TEACHER’S INTRODUCTION HOLLISTIC FIX KEY CONCEPT KEY RESEARCH AREA KEY APPLICATION INDUSTRIAL APPLICATION RESEARCH HOW WE STUDY KEY JOBS PROJECTS ONE CAN DO TRENDS. PREAMBLE STRUCTURE. Holistic fix.
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INDEX PREAMBLE STRUCTURE TEACHER’S INTRODUCTION HOLLISTIC FIX KEY CONCEPT KEY RESEARCH AREA KEY APPLICATION INDUSTRIAL APPLICATION RESEARCH HOW WE STUDY KEY JOBS PROJECTS ONE CAN DO TRENDS
PREAMBLE STRUCTURE Holistic fix Key concepts with practical examples Key research area Industrial TEACHER’S INTRODUCTION: Name of Instructor: Cabin Location: Te4lephone No. E-Mail ID Meeting Hours: Introduction to Electronics Engg. WHY? WHAT? WHERE? HOW? Key applications Research Key jobs and companies How we study? Lecture Plan Reference books, Journals Projects one can do? Trends Trends
TEACHER’S INTRODUCTION 1. Gaurav Sharma 2. Room No. 307 3. gaurav2231@gmail.com 5. MEETING HOURS– 11.30-12.30 p.m.
TEACHER’S INTRODUCTION 1. Manish Gupta 2. Room No. 211 3. manish.gupta2@bmas.edu.in 5. MEETING HOURS– 11.30-12.30 p.m.
TEACHER’S INTRODUCTION 1. Arpita Johri 2. Room No. 338 3. arpitajohri@rediffmail.com 5. MEETING HOURS– 11.30-12.30 p.m.
HOLLISTIC FIX OF ELECTRONICS ENGINEERING • PREREQUISITES • Basic Knowledge of Atomic Theory and bonding in • solids, gases and liquids (Before 12th standard) • (12th standard) • Elements of Group III, IV and V. • Semiconductor theory. • Semiconductor Physics
HOLLISTIC FIX………CONTINUED a. b. • Atomic structure: Ge and Si. • Covalent bonding of Si atom. • Energy band diagram. c.
SCOPE IN RELATED FIELDS… • Mobile Communication • Wireless Technologies • Microprocessors • Integrated Circuits • Aerospace • Networking • Medical science
Key Concepts PN JUNCTION DIODE Conduction states of ideal diode: a. ON b. OFF Ideal diode: (a) symbol (b) characteristics.
Breakdown Diodes Zener diode equivalents for the (a) “on” and (b) “off” states. • Applications of DIODE: • Rectifiers • Clippers • Clampers • Voltage Regulators
BIPOLAR JUNCTION TRANSISTORS [BJT] CE Configuration O/P characteristics of CE configuration Types of transistors: (a) pnp; (b) npn.
BJT BIASING Various operating points Potential Divider Biasing and corresponding Q-point
FIELD EFFECT TRANSISTORS [FET] a. b. d. JFET: a. Construction; b. O/P characteristics; c. Symbols; d. Shockley’s Equation c.
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR [MOSFET] b. a. a. Construction; b. Symbols N-channel D-MOSFET b. a. • Construction • Symbols N-channel E-MOSFET
OPERATIONAL AMPLIFIERS [Op-Amp] Basic op-amp. Inverting constant-gain multiplier. Noninverting constant-gain multiplier.
CATHODE RAY OSCILLOSCOPE [CRO] Cathode ray tube: basic construction
Cathode ray oscilloscope: general block diagram. Cathode ray oscilloscope: general block diagram.
KEY RESEARCH AREA OF ELECTRONICS ENGG. Research areas: • To improve stability of Q-point in transistors. • To improve temperature handling capacity of electronic devices. • To reduce the noise to a zero level • To make electronic devices more power efficient.
Key Jobs & Companies Texas Instruments www.ti.com Alcatel Lucent.www.alcatel-lucent.inNSNwww.nokiasiemensnetworks.comST microelectronicswww.st.com Fairchild Technology www.fairchildsemi.com
PUBLIC SECTOR JOBS Electronics Corporation of India Limited. www.ecil.co.in Bharat Electronics Limited. www.bel-india.com Hindustan Aeronautics Limited. www.hal-india.com Defense Research & Development Organization. www.drdo.org Bharat Sanchar Nigam Limited. www.bsnl.co.in
PROJECTS IN ELECTRONICS ENGINEERING Kit based Projects: • LED Based Water Level indicator • FM Receiver • Intercom 2 Way • Digital Clock Tele Based Projects: • Telephone call recorder • Tele based Home security • Optical Fiber based Data Communication • VLSI Based Projects
TRENDS IN ELECTRONICS ENGINEERING • The basic principle of operation of thermionic diodes was discovered by Frederick Guthrie in 1873 • In 1904, the vacuum-tube diode was introduced by J. A. Fleming. • In 1906, Lee De Forest added a third element, called the control grid, to the vacuum diode, resulting in the first amplifier, the triode. • In1930s the four-element tetrode and five-element pentode gained • prominence in the electron-tube industry. • 5. On December 23, 1947, Walter H. Brattain and John Bardeen • demonstrated the amplifying action of the first transistor at the Bell • Telephone Laboratories. 6. Drs. Ian Munro Ross (front) and G. C. Dacey jointly developed an experimental procedure for measuring the characteristics of a field-effect transistor in 1955.
Trends….. continued 7. An op-amp is first found in US Patent 2,401,779 "Summing Amplifier" filed by Karl D. Swartzel Jr. of Bell labs in 1941. 8. The popularity of monolithic op-amps was further improved upon the release of the LM101 in 1967, which solved a variety of issues, and the subsequent release of the μA741 in 1968.