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ME 381R Lecture 13-14 Semiconductor Devices and Thermal Issues. Dr. Li Shi Department of Mechanical Engineering The University of Texas at Austin Austin, TX 78712 www.me.utexas.edu/~lishi lishi@mail.utexas.edu. Reading: 1-7-1 & Ch. 7 in Tien et al. Depletion Region.
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ME 381R Lecture 13-14 Semiconductor Devices and Thermal Issues Dr. Li Shi Department of Mechanical Engineering The University of Texas at Austin Austin, TX 78712 www.me.utexas.edu/~lishi lishi@mail.utexas.edu Reading: 1-7-1 & Ch. 7 in Tien et al.
Depletion Region p-n Junction w/o Bias
Metal-Oxide-Semiconductor (MOS) Capacitor : Electron Affinity : Work Function Energy Band Diagram before making contact n-type
MOS Capacitor W/O Bias (Special Case: M = S) Energy Band Diagram after making contact
Accumulation and Depletion of Majority Carriers Block Charge Diagram Vi Very thin eVG VS VG
Ideal MOSFET VG>0
Thermal Circuit Particle transport theory Fourier’s law of heat conduction
Joule Heating inHigh-Field Devices Localized heat generation near the pinch-off point
Thermal Topographic Z T X X Thermometry of Nanoelectronics Scanning Thermal Microscope: Atomic Force Microscope (AFM) + Thermal Probe Laser Deflection Sensing Cantilever Temperature Sensor Sample X-Y-Z Actuator
10 mm Microfabricated Probes Pt Line Tip Pt-Cr Junction Laser Reflector SiNx Cantilever Cr Line Shi, Kwon, Miner, Majumdar, J. MicroElectroMechanical Sys., 10, p. 370 (2001)
Governing Equations for Electro-Thermal Simulation of Devices