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- PicoSEC - STMicroelectronics activities Overview

- PicoSEC - STMicroelectronics activities Overview. D. Sanfilippo. Outline. The Silicon PhotoMultiplier Technology overview Electro-optical characteristics STMicroelectronics activities overview. The Silicon Photo Multiplier (SiPM).

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- PicoSEC - STMicroelectronics activities Overview

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  1. - PicoSEC -STMicroelectronics activitiesOverview D. Sanfilippo

  2. Outline The Silicon PhotoMultiplier Technology overview Electro-optical characteristics STMicroelectronics activities overview D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  3. The Silicon Photo Multiplier (SiPM) • The Silicon PhotoMultiplier (SiPM) is a multi-cell semiconductor photon sensor; each cell operates as an independent photon counter • Cells are biased above the breakdown voltage and operate in Geiger mode; the discharge is quenched by a resistor connected to each diode • The individual signal amplitude does not depend on the number of photons firing the cell: each element operates digitally as a binary device • The SiPM output signal amplitude is the sum of signals from all the fired cells: it works as an analog detector that can measure light intensity D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  4. Technological features • N on P technology • Shallow junction • In-situ doped poly-silicon cathode layer • Integrated poly-silicon resistors Thin optical trench with metal filling Tunable Anti-reflection coating Dedicated gettering techniques Double layer passivation ARC double layer P+ type Anode backside contact D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  5. Device layout • Single pixel • Monolithic Array 2x2 Single pixel Pixel 2 Pixel 1 Pixel 4 Pixel 3 D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  6. SMD Optical Package Top view Bottom view Cross section D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  7. SiPM electrical characteristics Typical Breakdown voltage: 28 V Operative over-voltage range (OV): 3 ÷ 6 V Gain: ~ 3*106 · @ 3 V OV Dark current: ~ 250 nA/mm2 @ 3 V OV High bias discharge Breakdown Bias range D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  8. Optical characterization Experimental Setup Pulse Amplitude Spectrum Oscilloscope acquisition D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  9. Activities overview STMicroelectronics core activity: Develop a dedicated photon sensor for the Project, in particular a Silicon PhotoMultiplier (SiPM). Specific items: Design a new device with a dedicated layout Optimize the fabrication process Design and develop a functional package Perform the electrical characterization Perform the optical characterization D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

  10. Thank You! D. Sanfilippo - Silicon PhotoMultiplier - IMS R&D Catania

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