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Analysis of Heterojunction Bipolar Transistors

Analysis of Heterojunction Bipolar Transistors. Outline. 3-D Structure of Single Finger and Three Fingers C-up HBT A 3-D modal of single finger and three fingers C-up HBT Adjust the Thickness of PHS Layer and GaAs Substrate Compare with the results of 2- D modal

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Analysis of Heterojunction Bipolar Transistors

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  1. Analysis ofHeterojunction Bipolar Transistors

  2. Outline • 3-D Structure of Single Finger and Three FingersC-up HBT • A 3-D modal of single finger and three fingers C-up HBT • Adjust the Thickness of PHS Layer and GaAs Substrate • Compare with the results of 2- D modal • The results under the different boundary condition • Conclusion

  3. 3-D Structure of Single Finger C-up HBT

  4. A 3-D Modal of Single Finger C-up HBT

  5. Temperature distributions in C-up HBT of 3-D Modal (1/4 Symmetry)

  6. Temperature distributions in C-up HBT of 3-D Modal Shows by Isosurface (1/2 Symmetry)

  7. Compare with the Results of 2- D Modal

  8. Adjust the Thickness of PHS Layer and GaAs Substrate

  9. 3- D Modal Temperature distributions Compare with the Results of 2- D Modal The Temperature distributions of 3- D Modal The Temperature distributions of 2- D Modal

  10. 3- D Modal Temperature distributions Compare with the Results of 2- D Modal (con.) The Temperature distributions of 3- D Modal The Temperature distributions of 2- D Modal

  11. 398 298.5 Comparison of temperature distribution in C-up HBT with a thicker and a thinner thermal via Original thicker thermal via： Substrate＝19.5um； PHS＝8um A thinner thermal via： Substrate＝13.5um； PHS＝6um

  12. 3-D Structure of ThreeFinger C-up HBT

  13. A 3-D Modal of Three Finger C-up HBT

  14. Temperature distributions in C-up HBT of 3-D Modal by Finger Pitch = 18 um (1/4 Symmetry)

  15. Temperature distributions in C-up HBT of 3-D Modal by Finger Pitch = 10 um (1/4 Symmetry)

  16. Temperature distributions in C-up HBT of 3-D Modal Shows by Isosurface (1/2 Symmetry) Finger Pitch = 18 um

  17. Temperature distributions in C-up HBT of 3-D Modal Shows by Isosurface (1/2 Symmetry) Finger Pitch = 10 um

  18. 3- D Modal Temperature distributions Compare with the Results of 2- D Modal (Finger Pitch = 18 um ) The Temperature distributions of 3- D Modal The Temperature distributions of 2- D Modal

  19. 3- D Modal Temperature distributions Compare with the Results of 2- D Modal (con.) The Temperature distributions of 3- D Modal The Temperature distributions of 2- D Modal

  20. Compare with the Results of 2- D Modal

  21. Conclusion • The relation of maximum temperature to substrate thickness is linear, and the relation of maximum temperature to PHS thickness is a cubic equation in 2D and 3D analysis. • The temperature distribution of 3D modal is similar to 2D modal, but the result of 2D modal is higher than that of 3D modal. • The 3D analysis of 1-finger C-up HBT shows that the thickness of thermal via can be reduced 32% to provide the same thermal performance.

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