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CHAPTER 10. Master Figure. Fig. 10.1. Fig. 10.2. Fig. 10.3. Figs. 10.4 a, b. (a). (b). Fig. 10.5. Fig. 10.6. PVD Cu Seed. Cu Surface Treatment CVD Dielectric. Via Lithography and Etch. Cu Electrofill and Anneal. Line Lithography and Etch, TaN barrier. Cu CMP TaN Clean
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Figs. 10.4 a, b (a) (b)
Fig. 10.6 PVD Cu Seed Cu Surface Treatment CVD Dielectric Via Lithography and Etch Cu Electrofill and Anneal Line Lithography and Etch, TaN barrier Cu CMP TaN Clean Post CMP Clean
Fig. 10.15 Resistance (m), Capacitance (fF), Inductance (pH)
Si Chip Si Chip Failure sites – no strain concentration Critical failure site - strain concentration Substrate Substrate Fig. 10.20
Stress Compensation Layer Fig. 10.26
30 25 20 Current Crowding Ratio 15 10 5 0 Cr/thin Cu Al/Ni(V)/Cu Thick Cu Thick Ni Cu/Thick Ni UBM Fig. 10.29
Figs. 10.30 a, b, c (a) (b) (c)
Fig. 10.32 Conc.of noble nutal % Ag or % Cu inside Sn Current Density Additives
Fig 10.33 Al trace UBM Current crowding at solder Passivation Less current crowding at solder
Fig. 10.35 100 A:Electroless Ni- Immersion Au B:Solder Plating C:Gold Plating C B 50 PRICE PER BUMPED WAFER A STUD BUMPING COST 0 150,000 300,000 BUMPS PER WAFER
Figs. 10.36 a, b (a) (b)
Fig. 10.48 CNT Si Substrate Solder UBM Sputter metal Substrate Si Flip and reflow Substrate Remove Si for CNT transfer Substrate