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奈米科技概論期末報告 Reporter: 王瑋 系級 : 成大工程科學所 學號 :N96964359

奈米科技概論期末報告 Reporter: 王瑋 系級 : 成大工程科學所 學號 :N96964359. Light emitting diodes of fully Conjugated heterocyclic aromatic rigid-rod polymer doped with multi-wall carbon nanotubes. Nanotechnology vol. 16(1406) May 2005. Jen-Wei Huang and Shih Jung Bai

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奈米科技概論期末報告 Reporter: 王瑋 系級 : 成大工程科學所 學號 :N96964359

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  1. 奈米科技概論期末報告 Reporter:王瑋 系級:成大工程科學所 學號:N96964359

  2. Light emitting diodes of fully Conjugated heterocyclic aromatic rigid-rod polymer doped with multi-wall carbon nanotubes Nanotechnology vol. 16(1406) May 2005 Jen-Wei Huang and Shih Jung Bai Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China

  3. Outline • Introduction and motivation • Design • Results & Conclusions

  4. PBO poly-p-phenylenebenzo- bisoxazole (PBO) is a rigid-rod polymer with a fully conjugated heterocyclic aromatic backbone. • Applications • Polymer Light Emitting Diodes (PLED) • Polymer/Organic Thin Film Transistors (OTFT) • Solar Cell Substrate PBO Excellent thermo-oxidative stability Ease of thin-film processing

  5. Thin Film Processing Polymer Solution Preparing Lewis Acid MSA Thin Films on ITO Glass Freestanding Thin Film Cathode Deposition UV-Vis Spectrum 2000 I-V Measurement PL Spectrum Opto-electronic Characteristics Luminescent Characteristics

  6. Experimental instrument Transmission electron microscope (TEM) Field-emission scanning electron microscope (FE-SEM) JEOL JSM-6330TF

  7. PBO films containing 0.1wt% MWNTs Field-emission scanning electron Micrographs Of the cross-section area of a ITO/PBO+MWNT/Al LED. Transmission electron micrographs of a free-standing film

  8. Measurement of photoelectric features Photoluminescence system He-Cd Laser UV-Vis Absorption Spectrum Hitachi U-3501 dual-beam

  9. Measurement of photoelectric features

  10. I-V Measurement Kiethley2400

  11. I-V Measurement Decrease of threshold voltage (Vth) for single-layer ITO/PBO + MWNT/Al LEDs as MWNT content increased Current–voltage response of single-layer ITO/PBO + MWNT/Al light emitting diodes.

  12. Electroluminescence emission intensity Electroluminescence emission spectra of single-layer ITO/PBO + MWNT/Al light emitting diodes at a bias voltage of 9 V as a function of MWNT content.

  13. Conclusion • MWNT and PBO did not have overlapping electron orbitals affecting their energy gaps • Up to 0.1 wt% of MWNTs, the diode emission current increased by about two orders of magnitude over those of the diodes without MWNT • Increase of MWNT concentration caused a successive decrease in electroluminescence emission intensity, that was attributed to a quench effect from aggregation of MWNTs

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