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Lois: “Save me, Dr. HBT – from those evil HFETs.”

Lois: “Save me, Dr. HBT – from those evil HFETs.”. 36 Years. 36 Years. 550. 100. 1350. AlSb 1550. 200. 250. 150. InSb 220. 500. AlAs 2170. GaSb 770. 450. GaAsSb 720. GaAs 1420. InGaP 1900. InGaAs 760. InAlAs 1460. InP 1350. 200. InAs 360. 150. 780. 200. 170.

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Lois: “Save me, Dr. HBT – from those evil HFETs.”

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  1. Lois: “Save me, Dr. HBT – from those evil HFETs.”

  2. 36 Years

  3. 36 Years

  4. 550 100 1350 AlSb 1550 200 250 150 InSb 220 500 AlAs 2170 GaSb 770 450 GaAsSb 720 GaAs 1420 InGaP 1900 InGaAs 760 InAlAs 1460 InP 1350 200 InAs 360 150 780 200 170 550 170 Bandgap Heaven

  5. Increasing electron Velocity

  6. 2000 Nobel Prize in Physics "for developing semiconductor heterostructures used in high-speed- and opto-electronics," 2002 IEEE Medal of Honor "for contributions to high-frequency transistors, and hot-electron devices, especially heterostructure devices from heterostructure bipolar transistors to lasers, and their molecular beam epitaxy technology." Honorary doctorates from the Technical University of Aachen (Germany; 1985), the University of Lund (Sweden; 1998), the University of Colorado (USA; 2001), and the University of Jena (Germany; 2008). 2001, Grand Cross of the Order of Merit of the Federal Republic of Germany, the highest award given by the German government. He is a member of both the National Academy of Engineering and the National Academy of Sciences.

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