Strong coupling between Tamm Plasmon and QW exciton

1. Strong coupling between Tamm Plasmon and QW exciton E. Homeyer, C. Symonds, A. Lemaitre* , J.C. Plenet, J. Bellessa LPMCN (Laboratory of Physics of Condensed Mater and Nanostructures) University Claude Bernard Lyon 1, Lyon, France * LPN (Laboratory For Photonics and Nanostructures), Marcoussis, France PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

2. Introduction Outline • Plasmon in GaAs/GaAlAs heterostructures • Samples • Plasmon / heavy- and light-hole exciton mixing • Room temperature experiments • Tamm plasmon states • Description of Tamm plasmons • Emission of Tamm/exciton polaritons • Conclusion PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

3. Introduction Outline • Plasmon in GaAs/GaAlAs heterostructures • Samples • Plasmon / heavy- and light-hole exciton mixing • Room temperature experiments • Tamm plasmon states • Description of Tamm plasmons • Emission of Tamm/exciton polaritons • Conclusion PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

4. Introduction Metal Dielectric Surface plasmons • Surface plasmon : Interface metal / dielectric material • Damping ∟& // propagation • TM Mode only • Near a luminescent source (Dye or QW) • Weak coupling regime • Strong coupling regime PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

5. Introduction • For nanoparticles • For active layers such as GaN/InGaN QW • Enhancement SER 92 x A.Neogi, et al., Phys. Rev. B, 66,153305(2002) • Enhancement PL 17 x Enhancement PL : 2.5 x Coupling efficiency 60% A Akimov et al., Nature. 450, 402 (2007) Okamoto K et al. Nature Mat. 3 (9) 601 (2004) Plasmon in weak coupling regime Objective : enhancement of the spontaneous emission rate PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

6. Introduction • Strong interaction between plasmons and : • Aggregated dyes. • Laser dyes such as Rhodamine 6G  Rabi splitting energies up to 230 meV. J. Bellessa, C. Bonnand, J.C. Plenet, J. Mugnier., PRL 93, 36404 (2004). T.K. Hakala et al. PRL 103 053602 (2009) • Semiconductor nanocrystals arrays : CdSe dots under a thin silver film •  Rabi splitting of 112 meV D.E. Gomez et al. Nano Lett. 10 274 (2010) Plasmon in strong coupling PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

7. Introduction Outline • Plasmon in GaAs/GaAlAs heterostructures • Samples • Plasmon / heavy- and light-hole exciton mixing • Room temperature experiments • Tamm plasmon states • Description of Tamm plasmons • Emission of Tamm/exciton polaritons • Conclusion PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

8. Plasmon in GaAs/GaAlAs heterostructures • Samples elaborated in collaboration with A. Lemaître (LPN) Silver Silver QW (x5) GaAs • Decoupling with a silver grating : periodicity Λ = 250nm Metal Dielectric Samples PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

9. Plasmon in GaAs/GaAlAs heterostructures θ Plasmon/heavy/light-exciton mixing • Reflectometry at 77K Anticrossing plasmon/Xlh Strong coupling between SP and excitons PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

10. Plasmon in GaAs/GaAlAs heterostructures • Mixing of Xhh & Xlh • Polaritons : • plasmon/ • heavy hole exciton/ • Light hole exciton VXhh=22meV VXlh=21meV Plasmon/heavy/light-exciton mixing • Dispersion relation Xhh Plasmon Xlh J. Bellessa, C. Symonds, C. Meynaud, J.C. Plenet, E. Cambril, A. Miard, L. Ferlazzo, and A. Lemaitre. Phys. Rev. B 78, 205326 (2008). PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

11. Plasmon in GaAs/GaAlAs heterostructures No polaritonic luminescence is present Room temperature experiments • Still strong coupling @ RT  Rabi energy at resonance 20 meV PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

12. Introduction Outline • Plasmon in GaAs/GaAlAs heterostructures • Samples • Plasmon / heavy- and light-hole exciton mixing • Room temperature experiments • Tamm plasmon states • Description of Tamm plasmons • Emission of Tamm/exciton polaritons • Conclusion PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

13. Tamm plasmon states Description of Tamm plasmons • Surface mode • Bragg mirror / metal layer • Very narrow linewidth • Direct coupling to radiative light • TE and TM modes • Deep penetration length A. V. Kavokin, I. A. Shelykh, and G. Malpuech, Phys. Rev. B 72, 233102 2005. M. E. Sasin, et al., Appl. Phys. Lett. 92, 251112 2008. PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

14. Tamm plasmon states • Thick Bragg mirror to reduce the linewidth Silver film • Silver film on top of the structure  Tamm plasmon mode 15 • Inclusion of 2 InGaAs/AlGaAs QWs in the 15 last high refractive index layers Al0.05Ga0.95As 25 AlAs GaAs substrate Quantum wells in a Tamm structure PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

15. Tamm plasmon states • Anticrossing between the exciton and the Tamm plasmon • Rabi splitting : 12 meV • Thin polariton lines compared to the splitting • Simulations with a transfer matrix method Reflectometry experiments PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

16. Tamm plasmon states • Strong emission at the low polariton energy • Incoherent luminescence • Emission in TE and TM polarisations Luminescence of hybrid states PLMCN 2010, Cuernavaca, Mexico - April 15th 2010

17. Conclusion • Hybrid states plasmon/exciton in inorganic semiconductors • Plasmon/Xlh/Xhh interaction energies of 21 and 22 meV • Emission of Tamm plasmon/exciton polaritons PLMCN 2010, Cuernavaca, Mexico - April 15th 2010