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2. Avalanche gain in HgCdTe . Avalanche photodiodesVoltage controlled gain at the point of absorptionAlmost no additional noiseNear-zero power consumptionUp to GHz bandwidthRequires no silicon real estate. HgCdTe ? a unique material Electron/hole mass ratio very large ? electron gets all the e
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1. HgCdTe Avalanche Photodiode Arrays for Wavefront Sensing and Interferometry Applications Ian Baker* and Gert Finger** *SELEX Sensors and Airborne Systems Ltd, Southampton, UK **ESO, Garching, Germany
2. 2 Avalanche gain in HgCdTe
3. 3 Avalanche gain v. bias volts and cutoff wavelength
4. 4 Avalanche gain v. bias volts and cutoff wavelength
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9. 9 Array operability performance BIL compared with SW
10. 10 Avalanche gain for wavefront sensors
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13. 13 Experimental hybrid with variable junction diameters
14. 14 Result of variable junction diameter experiment
15. 15 ESO measurements on variable jn diameter array
16. 16 NEPh v. Bias Volts as function dark current - to set dark current specification
17. 17 Comparison of SELEX and ESO measurements of dark current v. temperature
18. 18 ESO Electro-Optic Test Rig
19. 19 Typical output from ESO Test Rig
20. 20 ESO measurement of uniformity under moderate gain
21. 21 ESO measurement of Avalanche Gain comparison with model
22. 22 ESO measurement of Quantum Efficiency 70%
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26. 26 Dark current defect map under extreme conditions effect of temperature
27. 27 Low photon flux imaging using avalanche gain
28. 28 Modelled sensitivity based on measured data and with a custom ROIC
29. 29 Conclusions on avalanche gain for wavefront sensing applications (A-O and interferometry)