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Joseph Manungu June 19, 2007

Semiconductors simulation using Genesise ISE-TCAD (Release 10, version 10.0) High Energy group meeting (Syracuse university). Joseph Manungu June 19, 2007. Goals. In this project, we want to do the simulations of semiconductors devices using synopsis’s software such as Genesise ISE-TCAD.

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Joseph Manungu June 19, 2007

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  1. Semiconductors simulationusing Genesise ISE-TCAD(Release 10, version 10.0)High Energy group meeting (Syracuse university) Joseph ManunguJune 19, 2007

  2. Goals • In this project, we want to do the simulations of semiconductors devices using synopsis’s software such as Genesise ISE-TCAD. • From these simulations, extract the physics parameters that are important (Electric field, current, voltage, etc.)

  3. How to proceed • In order to be able to simulation any semiconductor device, one needs to use a) DIOS b) MDRAW c) DESSIS These three different pieces has to be connected each other.

  4. Note: Editing dios file as beginner can seem to be a huge task because it requires a very good knowledge of C++ and number of synopsis syntax convention that we get acquainted along with time. • To avoid this, Genesise ISE-TCAD has resorted to a Graphical User Interface (GUI) such as mdraw in order to help the learner.

  5. MDRAW • This ISE-TCAD module allow the creation of the geometry of the semiconductor and fix some properties that need to be taken into account. • Mdraw contains two environment areas : 1. the boundary 2. the doping

  6. With boundary environment, one can : 1. define the dimension of the device and its geometry; 2. define the contacts; • With doping environment, one can define the doping profile of the carriers. The most used profiles are a Gaussian profile, an error function doping profile and a constant doping profile.

  7. example • (from Chaouki and Artuso)

  8. Next • We have to do a diode with a n-type substrate of 3Kohm-cm resistivity & with a thickness of 300 microns, with a p+ implants. The lateral dimension is 500 microns and the p+ implant width 50 microns. In the backplane (bottom of the diode) put a uniform n+ implant. Al will be used as contacts on top of the p+ implant and at the bottom.

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