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Role of Glycine in Chemical Mechanical Planarization (CMP) of Copper

Role of Glycine in Chemical Mechanical Planarization (CMP) of Copper. SFR Workshop May 24, 2001 Serdar Aksu, Fiona M. Doyle Berkeley, CA. 2001 GOAL: to delineate specific roles of a range of complexing agents and oxidizers in copper CMP by 12/30/2001. Objective and Methods.

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Role of Glycine in Chemical Mechanical Planarization (CMP) of Copper

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  1. Role of Glycine in Chemical Mechanical Planarization (CMP) of Copper SFR Workshop May 24, 2001 Serdar Aksu, Fiona M. Doyle Berkeley, CA 2001 GOAL: to delineate specific roles of a range of complexing agents and oxidizers in copper CMP by 12/30/2001.

  2. Objective and Methods • In copper CMP, electrochemical and mechanical mechanisms are not well understood. • Develop a foundation for understanding the behavior of slurries with complexing agents using glycine as a model reagent • Comparison of Cu electrochemical behavior in aqueous solutions with and without glycine in terms of • Potential-pH diagrams • Polarization experiments • Comparison of in-situ Cu electrochemical behavior during polishing by slurries/solutions with or without glycine • In-situ polarization experiments • In-situ monitoring of open circuit potential (EOC)

  3. 1- Removal of Passivating Film by Mechanical Action at Protruding Areas 2- Wet Etch of Unprotected Metal by Chemical Action. Passivating Film Reforms Metal Passivating Film TYPICAL METAL (Cu, W, Al etc.) CMP SLURRY CHEMICALS INHIBITORS: Benzotriazole (BTA) OXIDIZERS: H2O2, KIO3, Fe(NO3)3 COMPLEXING AGENTS: NH3, EDTA, Glycine, Ethylene Diamine 3- Planarization by Repetitive Cycles of (1) and (2) PASSIVATION DISSOLUTION Planarization Mechanism in Metal CMP by Kaufman’s Tungsten CMP Model

  4. Experimental Techniques In-situ Electrochemical Experiments Rotating Disk Electrode Rotator Frame w=200 rpm Rotating Cu Disk electrode Luggin Probe & Reference Electrode Fritted Glass Gas bubbler P=27.6 kPa Magnetic Stirrer Pt Counter Electrodes Copper Working Electrode Solution / Slurry pool (Chemicals / Alumina abrasive Particles w/ Average Size ~ 120 nm from EKC Tech.) Suba 500 Polish Pad (Rodel Corp)

  5. Copper Electrochemical Behavior No Glycine CuT=10-5 CuT=10-5 ; LT=10-2 10-2 M Glycine

  6. In-situ Polarization Diagrams 10-2 M Glycine No Glycine pH=9 No Glycine 10-2 M Glycine pH=12

  7. In-situ Open Circuit Potential Measurements Without Glycine With 10-2 M Glycine

  8. Conclusions • Polarization results well correlated with potential-pH diagrams • No significant changes in in-situ polarization for active behavior • Mechanical components significantly affected in-situ polarization for active-passive behavior • Kaufman’s tungsten CMP model is also valid for Cu CMP • Glycine (complexing agents) may enhance the polishing efficiency

  9. Future Goals • Investigation of Cu electrochemical behavior in ethylenediamine (En) and ethylenediaminetetraacetic acid (EDTA) • Studying Cu polishing behavior in EDTA • Delineating the synergy effect between chemical (electrochemical) and mechanical contributions • Exploration of the role of chemical oxidizers, especially H2O2

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