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Radiation Effects Test Summary: RadHard Eclipse FPGA

Radiation Effects Test Summary: RadHard Eclipse FPGA. Ron Lake January 18, 2006. Radiation Testing Conditions. SEU 25 o C, 2.25V core, 3.0V I/O, in accordance w/ EIA/JESD57 Ions tested: Au, Kr and Ar from 0 º (normal incidence) to 60º Device dynamically stimulated at 1 MHz SEL

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Radiation Effects Test Summary: RadHard Eclipse FPGA

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  1. Radiation Effects Test Summary: RadHard Eclipse FPGA Ron Lake January 18, 2006

  2. Radiation Testing Conditions • SEU • 25oC, 2.25V core, 3.0V I/O, in accordance w/ EIA/JESD57 • Ions tested: Au, Kr and Ar from 0º (normal incidence) to 60º • Device dynamically stimulated at1 MHz • SEL • 125 ºC, 2.7V core, 3.6V I/O, in accordance w/ EIA/JESD57 • Ion: Au @ 41º, effective fluence = 1E7 ions/cm2,effective LET = 120 MeV-cm2/mg • Device statically biased and supply currents monitored

  3. Radiation Testing Conditions • TID • 25ºC, 2.7V core, 3.6V I/O, in accordance w/ MIL-STD-883E Method 1019 • J.L. Shepherd model 81-22 Cobalt 60 gamma cell source • Design statically biased, 88000 ViaLinks, 120 AC measurements • Dose Rate Latch-up • 125 ºC, 2.7V core, 3.6V I/O, in accordance w/ MIL-STD-883E, Method 1020 • FXR-75 electron mode source w/ design statically biased • Dose Rate Upset • 25 ºC, 2.25V core, 3.0V I/O, in accordance w/ MIL-STD-883E, Method 1021 • LINAC electron mode source w/ design dynamically stimulated

  4. Radiation Testing Single Event Effects For RegF, Static Dose Rate Effects for Latchup and Upset Available upon Request

  5. Co60 TID AC Deltas • Delta’s calculated at room temperature for all voltage combinations • <3% change in delay at 100 krad(Si) • <15% change in delay at 300 krad(Si) • Irradiated at 1 rad(Si)/sec • All propagation delays stay within simulation limits, speed grade -4. • All tester limits defined by simulation

  6. Summary • Completed RadHard Eclipse FPGA radiation evaluation • Low Single Event Upset error rate for both logic cell flip-flop and SRAM (geosynchronous orbit, Adams 90% worst case environment) • Single Event Latch-up immune to > 120 MeV-cm2/mg at 125º C • Passes data sheet and simulation parameters to > 300 krad(Si) Total Ionizing Dose • Proton testing over a range of 100Mev - 200Mev show worst case error rate of 3.1E-10 errors/bit-day for dynamically driven shift registers • Dose rate testing results available upon request from Aeroflex • Offered as a flight qualified QML Q device • SMD 5962R04229

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