Ultra-broadband 20.5 – 31 GHz monolithically-integrated CMOS power amplifier

Ultra-broadband 20.5–31 GHzmonolithically-integrated CMOSpower amplifier A. Vasylyev, P. Weger and W. Simbu¨rger, ELECTRONICS LETTERS 10th November 2005 Vol. 41 No. 23 指導教授:林志明教授學生:劉彥均

Outline • Introduction • Circuit design • Measurement results • Conclusion

Introduction • Low-cost K- and Ka-band power amplifiers are in much demand(car safety, communication systems)

Circuit design

Circuit design • One-stage push-pull PA • Current mirror(R1,M1 and R2,M2,M3) • M5,M6 in common-source configuration, M4,M7 in common-gate configuration

Measurement result

Measurement result • The measured small-signal gain has a maximum at 25.7 GHz and equals 8.4 dB. • 3 dB bandwidth of 10.5 GHz that is between 20.5 and 31 GHz.

Measurement result • At 25.7 GHz, has a maximum PAE of 13%, output power of 13 dBm with 1.5V supply voltage • Output power level can be increased using the power combining technique

Conclusion • High performance and very small active area • Can be used in the next generation of car safety and communication systems.

Ultra-broadband 20.5 – 31 GHz monolithically-integrated CMOS power amplifier