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IV Measurements on RD50 Sensors

IV Measurements on RD50 Sensors. Carl Goodrich 5-1-08. Inventory. 23 Boxes Each contains a long sensor (L) and two short sensors (S1 and S2) A “completed” box means we have IV measurements for all three sensors Boxes are grouped by: Type (P-type or N-type)

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IV Measurements on RD50 Sensors

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  1. IV Measurements on RD50 Sensors Carl Goodrich 5-1-08 Carl Goodrich- VELO Meeting

  2. Inventory • 23 Boxes • Each contains a long sensor (L) and two short sensors (S1 and S2) • A “completed” box means we have IV measurements for all three sensors • Boxes are grouped by: • Type (P-type or N-type) • Method for crystal growth (MCz or FZ) Carl Goodrich- VELO Meeting

  3. MCz (11 total) 10 completed 1 not completed FZ (11 total) 7 completed 4 not completed FZN (1 total) 0 completed 1 not completed P-type (11 total) 9 completed 2 not completed N-type (12 total) 8 completed 4 not completed Inventory- method and type 23 Boxes  17 completed Carl Goodrich- VELO Meeting

  4. Sensor: 2535-10 Type / Silicon Method: N-type / FZ Vbias Ground Carl Goodrich- VELO Meeting

  5. Sensor: 2535-8 Type / Silicon Method: N-type / FZ Vbias Ground What causes this dip? Carl Goodrich- VELO Meeting

  6. Time Between Runs Increasing time between runs Type / Silicon Method: P-type / MCz - Long Sensor Carl Goodrich- VELO Meeting

  7. Sensor: 2552-11 Type / Silicon Method: N-type / MCz Vbias Ground Carl Goodrich- VELO Meeting

  8. Sensor: 2553-13 Type / Silicon Method: P-type / MCz Vbias Ground Carl Goodrich- VELO Meeting

  9. Sensor: 2553-14 Type / Silicon Method: P-type / MCz Vbias Ground Carl Goodrich- VELO Meeting

  10. Effect of Irradiation • 4 Sensors were irradiated • Dose: 1E15 n equ / cm2 • Pre-irradiation measurements performed by Sadia • When returned, we did not know which sensors were which… Carl Goodrich- VELO Meeting

  11. Type / Silicon Method: P-type / MCz (1) and FZ (3) Ground Vbias Pre-Irradiation Guard Ring Current Total Current = + Bias Ring Current FZ MCz Carl Goodrich- VELO Meeting

  12. Irradiated Sensors- Results • The current increased by approximately 5 orders of magnitude. • To protect the sensors, we limited the current to 1mA. • The irradiated sensors obtained this current between 250V and 400V. • One sensor showed a significantly greater current, suggesting it might be the MCz sensor. Carl Goodrich- VELO Meeting

  13. Type / Silicon Method: P-type / MCz (1) and FZ (3) Vbias Ground Post-Irradiation Dose: 1E15 n equ / cm2 Carl Goodrich- VELO Meeting

  14. Type / Silicon Method: P-type / MCz (1) and FZ (3) Pre- and Post-Irradiation Post-Irradiation Note: We do not know which pre-irradiated sensor corresponds to each post-irradiated sensor Log Scale!!! Pre-Irradiation Carl Goodrich- VELO Meeting

  15. Backup Slides Carl Goodrich- VELO Meeting

  16. What circuit to use? • Biasing the rubber pad increases the current, especially after 600V. • Also increases the uncertainty in the measurement • Cannot measure the Guard Ring and Bias Ring currents separately. Carl Goodrich- VELO Meeting

  17. Czochralski (Cz) Method Method for forming single silicon crystals • Process: • Melt polysilicon • Introduce a single silicon “seed” and pull up slowly • Silicon freezes at the solid-liquid interface to form a single crystal Carl Goodrich- VELO Meeting

  18. Czochralski (Cz) Method • High concentrations of oxygen impurities • Increases the radiation hardness (RH) • Good- needed due to high radiation • Decreases the resistivity • Bad- high resistivity needed for detectors • Increase the resistivity by applying a strong magnetic field during growth • Magnetic Czochralski Method (MCz) Carl Goodrich- VELO Meeting

  19. Float Zone (FZ) Method Another method for forming single silicon crystals • Process • Place a single silicon “seed” below a polysilicon rod • RF coil (heater) moves upward • Silicon melts and refreezes as a single crystal Carl Goodrich- VELO Meeting

  20. Float Zone (FZ) Method • Low concentration of impurities • Low radiation hardness (RH) • Bad • High resistivity • Good • To increase RH, add: • Oxygen (DOFZ) • Nitrogen (FZN) Carl Goodrich- VELO Meeting

  21. References • Panja-Riina Luukka. Ph.D. Thesis. “CHARACTERIZATION OF CZOCHRALSKI SILICON DETECTORS.” INTERNAL REPORT SERIES. Helsinki Institute of Physics. • Gianluigi Casse's PhD thesis • http://hep.ph.liv.ac.uk/~gcasse/thesis.html Carl Goodrich- VELO Meeting

  22. Sensor: 2535-7 Type / Silicon Method: N-type / FZ Vbias Ground Carl Goodrich- VELO Meeting

  23. Sensor: 2552-9 Type / Silicon Method: N-type / MCz Vbias Ground Carl Goodrich- VELO Meeting

  24. Sensor: 2552-10 Type / Silicon Method: N-type / MCz Vbias Ground Carl Goodrich- VELO Meeting

  25. Sensor: 2552-12 Type / Silicon Method: N-type / MCz Vbias Ground Carl Goodrich- VELO Meeting

  26. Sensor: 2552-14 Type / Silicon Method: N-type / MCz Vbias Ground Carl Goodrich- VELO Meeting

  27. Sensor: 2553-12 Type / Silicon Method: P-type / MCz Vbias Ground Carl Goodrich- VELO Meeting

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