RF and Analog/Mixed-Signal Technologies

1. RF and Analog/Mixed-Signal Technologies Herbert S. Bennett herbert.bennett@nist.gov Acting Chairman for ITRS RF and A/MS WG National Institute of Standards and Technology Gaithersburg, Maryland, USA 20899 5 December 2012 ITRS Winter Public Meeting Hsinchu, Taiwan Presented by Michael Gaitan, NIST, Chairman for ITRS MEMS WG

2. RF&A/MS Winter 2012 Chapter overview Membership Application drivers Technologies CMOS, Bipolar, III-V, HVMOS, Passives Outlook

3. RF&A/MS Chapter • Chapter organization is aligned by device technologies • Such as CMOS, Si Bipolar, III-V, and Passives • Applications for devices determines the technology requirements and Figures of Merit (FoMs). • Broadened scope in 2012 to include analog applications the 2013 edition • Described in Mixed-Signal section of System Drivers chapter • May revise the scope for 2013 to include higher voltages, heterogeneous integration, and ultra-lower power for medical devices and to remove HVMOS. • Close cross-TWG interactions and alignments with A&P, Design/SysDrivers, ERD, Interconnect, MEMs (especially, RF MEMS), and PIDS

4. RF and A/MS Membership TI KamelBenaissa TU Dresden/UCSD Michael Schroter Univ. of Michigan Mina Rais-Zedah (Passives) Univ. of Toronto SorinVoinigescu IBM MattiasDahlstrom(CMOS) Kathleen Kingscott Jack Pekarik Dawn Wang IEEE Anthony Immorlica Jr. ITRS Linda Wilson Jazz Semiconductor Edward Preisler National Semiconductor Wibo Van Noort NIST Herbert Bennett (Acting Chair) Michael Gaitan (MEMS Chair) NXP Peter Magnèe PMC-Sierra Hormoz Djahanshahi Raytheon Tom Kazior (III-V) Sony Kaneyoshi Takeshita ST Pascal Chevalier(Bipolar) Analog Devices Ali Eshraghi David Robertson Craig Wilson Susan Feindt Freescale Jay John Fujitsu Toshiro Futatsugi Hitachi Ltd. DighHisamoto HRL James Li 24 Active members for 2013 (38 Active members for 2012) 18 N. America, 3 Europe, 3 Asia Seeking a new Chair for the TWG

5. System Drivers • Circuit-level FoMs related to device technology FoMs • Low-noise amplifier (LNA) • Voltage-controlled oscillator (VCO) • Power amplifier (PA) • Analog-to-digital converter (ADC) • Serializer-Deserializer (SerDes)

6. CMOS TRENDS • The TWG adopted a similar methodology that PIDS developed and used in 2012 to develop the roadmap: use of TCAD-based models to predict FoMs at the device level. • Need to account for realistic layout & resulting parasitic impedances • Lower Power Requirements – in mobile RF for Internet of Things • Integration density – very large number of digital gates integrated on the same die as large number of surrounding periphery analog I/Os, supports complex processing functions (e.g., network processing, routing and protocol mapping data-communication applications) • High-speed SerDes Transceivers – serial data rates going up from 10-14 Gb/s to 20-28 Gb/s and 40-50 Gb/s. A mix of analog and DSP takes advantage of high-speed, densely-integrated digital to perform DSP functions, e.g. digital equalization, filtering & adaptation in RX. Hybrid analog/digital or all-digital PLLs/DLLs making their way in TX clock-multiplier unit (CMU) and RX clock-and-data-recovery (CDR).

7. Bipolar 2013: Major changes expected in the Bipolar Roadmap • High-Speed Bipolar Device FoMs • Use simulation-based roadmap (TCAD + Compact modeling) to predict device FoMs • Assessment of the impact of Back End of Line (BEOL) parasitics (packaging, interconnects, etc) will be included in the TCAD + Compact modeling

8. III-V technologies • Analog, Microwave, mm-wave applications with emphasis on mm-wave • Production dates of scaled InP HEMT, InP HBT and GaN HEMT shifted one year sooner (release date driven by ‘pull’ for technology) • Technology roadmaps truncated at expected end of scaling • GaAs PHEMT(2015), GaAs Power MHEMT(2019), InP Power HEMT(2023), • Low Noise GaAs MHEMT and InP HEMT, InP HBT and GaN HEMT expected to continue scaling • May split GaN technology requirements into those for different market applications (power electronics, RF, and sub-mm-wave) and InPmHEMT into their respective market applications. • For FETs, currently D-mode only, plan to add E-mode device in 2013 revision • FoMs depend on technology and application [ (fT, fMAX, gm, VBD), (Power, gain, efficiency @ 10, 24, 60, 94, 140, 220 GHz), (NFMIN, GA @ 10, 24, 60, 94 GHz), and • (LNA NF, GA @ 140, 220 GHz)

9. High Voltage MOS and Passive Devices • For 2013 • TWG is recruiting new members to develop technology requirement tables for High Voltage MOS and Passive Devices.

10. Outlook & future considerations • New opportunities for discussions with the MEMS TWG for medical applications and the ERD TWG for emerging device technologies. • Imaging is not currently in the roadmap. The TWG would like to expand the roadmap into THz applications for imaging. • The TWG would like to evaluate Automotive Radar applications to determine if they are ready for roadmapping. • The TWG is developing a survey to understand how to increase the relevance of its roadmapping efforts; especially for organizations developing MtM device technologies (e.g. Tricorder X prize – “healthcare in the palm of your hand.”)