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Section 10: Layout. Layout Design Rules. (1) Absolute-Value Design Rules * Use absolute distances (2) -based Design Rules. 2. Metal-Si Contact Hole. (same rule for Metal-poly). Min. contact hole = 2 x 2 . Min contact hole to diffusion layer distance = . . Al. SiO 2. SiO 2.
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Section 10: Layout EE143 –Ali Javey
Layout Design Rules (1) Absolute-Value Design Rules * Use absolute distances (2) -based Design Rules EE143 –Ali Javey 2
Metal-Si Contact Hole (same rule for Metal-poly) Min. contact hole = 2 x 2 Min contact hole to diffusion layer distance = Al SiO2 SiO2 n+ n+ p-sub p-sub EE143 –Ali Javey
Metal Lines Line 1 Min width = 2 Min. metal-metal spacing = 3 Line 2 [Rationale] metal runs on rough topography 3 spacing to ensure no shorting between the 2 lines. EE143 –Ali Javey
M1-Contact Overlap Min overlap of contact hole = Etching problem CVD SiO2 deposition. problem in narrow gap SiO2 • Si EE143 –Ali Javey
Poly-Si Gate Min gate-overlap of field oxide = Avoid n+ channel formation during S/D Implant n+ n+ n+ ideal With overlay error EE143 –Ali Javey
Gate contacting Comment: Al to poly contact should not be directly on top of gate oxide area Al Poly gate Gate oxide Si Al Al ~400OC Al spike Poly Poly SiO2 SiO2 Si Si EE143 –Ali Javey