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Section 10: Layout

Section 10: Layout. Layout Design Rules. (1) Absolute-Value Design Rules * Use absolute distances (2)  -based Design Rules. 2. Metal-Si Contact Hole. (same rule for Metal-poly). Min. contact hole = 2  x 2 . Min contact hole to diffusion layer distance = . . Al. SiO 2. SiO 2.

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Section 10: Layout

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  1. Section 10: Layout EE143 –Ali Javey

  2. Layout Design Rules (1) Absolute-Value Design Rules * Use absolute distances (2)  -based Design Rules EE143 –Ali Javey 2

  3. Metal-Si Contact Hole (same rule for Metal-poly) Min. contact hole = 2  x 2  Min contact hole to diffusion layer distance =   Al SiO2 SiO2 n+ n+ p-sub p-sub EE143 –Ali Javey

  4. Metal Lines Line 1 Min width = 2 Min. metal-metal spacing = 3 Line 2 [Rationale] metal runs on rough topography 3  spacing to ensure no shorting between the 2 lines. EE143 –Ali Javey

  5. M1-Contact Overlap Min overlap of contact hole =  Etching problem CVD SiO2 deposition. problem in narrow gap SiO2 • Si EE143 –Ali Javey

  6. Poly-Si Gate Min gate-overlap of field oxide = Avoid n+ channel formation during S/D Implant n+ n+ n+ ideal With overlay error EE143 –Ali Javey

  7. Gate contacting Comment: Al to poly contact should not be directly on top of gate oxide area Al Poly gate Gate oxide Si Al Al ~400OC Al spike Poly Poly SiO2 SiO2 Si Si EE143 –Ali Javey

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