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Functional Nanoscale Devices

Functional Nanoscale Devices. Rational You ITRI-IEK-NEMS 2001/08/01. Source: IWGN, NSTC (1999/09). Functional device scales. ---. Source: IWGN, NSTC (1999/09). Single-Charge Electronics -1.

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Functional Nanoscale Devices

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  1. Functional Nanoscale Devices Rational You ITRI-IEK-NEMS 2001/08/01 Source: IWGN, NSTC (1999/09)

  2. Functional device scales • --- Source: IWGN, NSTC (1999/09)

  3. Single-Charge Electronics -1 • Metal colloids, self-assembled monolayer (SAM) coatings, polysilicon, quantum dots embedded in SiO2 Source: IWGN, NSTC (1999/09), Hitachi, IBM, RIKEN, NTT, ETL, University of Lund

  4. Single-Charge Electronics -2 • Sidewall extensions of MOSFET gate Source: IWGN, NSTC (1999/09), Toshiba

  5. Single-Charge Electronics -3 • Oxidation of metal or semiconductor with scanning tunneling microscope (STM) tip Source: IWGN, NSTC (1999/09), ETL

  6. Single-Charge Electronics -4 • STM probe oxidation of metal on vicinal substrate steps Source: IWGN, NSTC (1999/09), ETL

  7. Single-Charge Electronics -5 • Double barrier tunnel diode structure Source: IWGN, NSTC (1999/09), Max-Planck-Institut, Stuttgart; NTT

  8. Single-Charge Electronics -6 • Gated double barrier tunnel diode structure Source: IWGN, NSTC (1999/09), Max-Planck-Institut, Stuttgart; NTT; Purdue University

  9. Single-Charge Electronics -7 • Depletion layer control of 2DEG area Source: IWGN, NSTC (1999/09), Hitachi, University of Glasgow, University of Tokyo

  10. Single-Charge Electronics -8 • Tetrahedral shaped recess, TSR Source: IWGN, NSTC (1999/09), Fujitsu

  11. Single-Charge Electronics -9 • Double barrier metallic SET patterned by e-beam Source: IWGN, NSTC (1999/09), NEC

  12. Single-Charge Electronics -10 • A single molecule connecting metallic contacts Source: IWGN, NSTC (1999/09), Yale University, University of South Carolina, Delft University, Karlsruhe University

  13. Functional Nanoscale Devices • SET Architectures • Quantum Dot Flash Memory Source: IWGN, NSTC (1999/09)

  14. Giant Magnetoresistance Activities Source: IWGN, NSTC (1999/09), Based on publications, patents or visits

  15. Nano-magnetics • Granular GMR—Co, Fe(Nagoya University, Tohoku University, CNRS-Thomson, UCSB, UCSD) • Current in plane(Matsushita, Fujitsu, Mitsubishi, Toshiba, Hitachi, Thomson, Philips, Siemens, IBM, Univ. Regensburg, IMEC, Nagoya University, Tohoku University, NIST) • Magnetic tunnel junction (IBM, MIT, HP, Tohoku University) • Ferromagnetic/metal/ferromagnetic: 3 - 60 periods free-standing (NRL, CNRS-Thomson, Philips, Michigan State, Lawrence Livermore Labs); plated into pores (L’École Polytechnique Fédérale de Lausanne, Johns Hopkins University, Université Catholique Louven) Source: IWGN, NSTC (1999/09)

  16. Quantum Dot Lasers • Schematic of a semiconductor laser Source: IWGN, NSTC (1999/09)

  17. Quantum Dot Lasers • Density of electronic states as a function of structure size Source: IWGN, NSTC (1999/09)

  18. Quantum Dot Lasers • Summary of Quantum Dot Laser Results Source: IWGN, NSTC (1999/09), Bimberg et al. 1997

  19. Carbon Nanotubes • Nanotube Fabrication Methods • Electrical and Field Emission Properties of Nanotubes Source: IWGN, NSTC (1999/09)

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