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Quantum Effects in Nanoscale MOSFET Devices at Low Temperature

Quantum Effects in Nanoscale MOSFET Devices at Low Temperature. Alexandra Day Society of Physics Students, Wellesley College Mentors: John Suehle, Charles Cheung, Ken Vaz National Institute of Standards and Technology. Transistors: Key to Technology. How a Transistor Works.

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Quantum Effects in Nanoscale MOSFET Devices at Low Temperature

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  1. Quantum Effects in Nanoscale MOSFET Devices at Low Temperature Alexandra Day Society of Physics Students, Wellesley College Mentors: John Suehle, Charles Cheung, Ken Vaz National Institute of Standards and Technology

  2. Transistors: Key to Technology

  3. How a Transistor Works Electron flow: Source  Drain Gate Source Drain Body

  4. Approaching the Quantum Limit • Wave-particle duality • de Broglie wavelength: • 4.5 nm at room temperature • 39 nm at 4K 39nm 22nm

  5. Quantum Effects in Modern Devices? • Measurements indicate quantum behavior • 2 types: • Interference • Confinement

  6. Quantum Interference in Transistors Longer wavelength How can we apply this to nanoscale MOSFETs? Energy Energy V1 Vo Position Position ?

  7. Transistor Model Potential= Vo Potential = V1 Potential = 0

  8. Wave Reflection at Barriers

  9. Matrix Formulation

  10. “M”

  11. Data Analysis Drain Current Gate Voltage

  12. Acknowledgements • Special thanks to: NIST, AIP, Toni Sauncy, Dave Seiler, John Suehle, Charles Cheung, Ken Vaz, Howard Cohl, JibinZou

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