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Modeling Read-Out for Solid-State Quantum Computers in Silicon

Modeling Read-Out for Solid-State Quantum Computers in Silicon. Modeling Read-Out for Solid-State Quantum Computers in Silicon. Vincent Conrad Supervisors: C.Pakes & L. Hollenberg. Introduction. Solid-State Quantum Computers in Silicon. Single Electron Transistors. Modeling Read-Out.

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Modeling Read-Out for Solid-State Quantum Computers in Silicon

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  1. Modeling Read-Out for Solid-State Quantum Computers in Silicon Modeling Read-Out for Solid-State Quantum Computers in Silicon Vincent Conrad Supervisors: C.Pakes & L. Hollenberg

  2. Introduction Solid-State Quantum Computers in Silicon Single Electron Transistors Modeling Read-Out Results & Conclusion Further Work

  3. Solid-State Quantum Computers in Silicon Scalable Hard Qubits Kane Quantum Computer Spin-Qubit Buried Donor Charge Qubit Quantum Computer Charge-Qubit

  4. Kane Quantum Computer

  5. Kane Quantum Computer spin-qubit

  6. Buried Donor Charge-Qubit Quantum Computer Charge-qubit

  7. Potential Barriers Quantised energy levels Fermi Level of Source is lower then first unoccupied level of dot { Energy spacing must be greater then thermal smearing Single Electron Tunneling

  8. Fermi energy of source now higher then dot’s 1st unoccupied energy level. An electron can now occupy the dot. Coulomb blockade prevents others. Single Electron Tunneling Applying a potential shifts the dot’s energy levels.

  9. source control dot (island) drain Single-Electron Transistor S E T Including a control gate allows us to manipulate the island’s energy levels. controlled single electron tunneling

  10. Energy stored in a capacitor Work done by tunneling events Orthodox SET theory The only quantized energy levels occur in the island. The time of electron tunneling through the barrier is assumed to be negligibly small. Coherent quantum processes consisting of several simultaneous tunneling events ("co-tunneling") are ignored.

  11. extremely sensitive to voltage variations on the island conductance control gate voltage electron motion SET Sensitivity

  12. drain source island electron hole Read-Out Single electron’s motion between dopants. Vary potential on the island (control gate). Induced island charge. Require induced charge > SET sensitivity.

  13. Q = CV Spin-Qubit Read-Out

  14. Q = CV Charge Qubit Read-Out

  15. = 2.49x10-2 e = 2.14x10-2 e Results N.B. For charge qubit Dq is difference between two points.

  16. Conclusions Induced island charge >> SET Sensitivity 2 x 10-2 e >> 3.2 x 10-6 e Need an answer before information loss Electron-spin relaxation time (spin-qubit) Charge dissipation time (charge-qubit) Well inside estimated times for both information loss mechanisms Time given by shot-noise limit Both qubit types should produce measurable results using current technology made by the SRCQCT

  17. More complete architecture simulations. Matching simulations to experiment. Further Work Full type3 simulation ISE-TCAD input files prepared. Estimate 100 000 node points required. Accounts and ISE-TCAD setup at HPC. Beowulf in-house cluster under construction. Convert type3 simulation to replicate macroscopic charge-qubit experiment.

  18. Nano-circuits are pretty darn small. A circuitry interlude: hole electron electron and hole (spin-qubit) Type3 Device

  19. Poisson’s Equation coarse User specifies mesh spacing to vary over regions of interest. Graphical user interface for visual analysis of simulations. AC analysis Extend ISE-TCAD to nanotech/mesoscopic devices. fine Integrated Systems Engineering – Technology Computer Aided Design I S E – T C A D Software package designed for microchip industry. MESH DESSIS PICASSO Orthodox approach to single-electron tunneling.

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