Overview

1. Overview VICENTE MUÑOZ SANJOSÉ

2. Research fields • Electromagnetic field diffusion in ferromagnetic materials(1980-1984) • Characterizacion of high Tc superconductors (1987-1989) • Crystal growth and characterization of materials(1987-

3. Electromagnetic field diffusion in ferromagnetic materials UNIVERSITAT DE VALÈNCIA Electromagnetic field diffusion in a ferromagnetic half space: analytical solution Electromagnetic field diffusion: numerical solution

4. Electromagnetic field diffusion in ferromagnetic materials • Design and installation of a system for the measurement of hysteresis loops • Static and dynamic behaviour • Study and modellitation of hysteresis loops • Study of the diffusion equation • Analytical aproach • Numerical aproach • Experimental and theoretical study of power losses in ferromagnetic materials Advisory Prof. V. Such

5. Synthesis and characterization of high Tc superconductors “Preparación y caracterización de capas delgadas de óxidos mixtos superconductores de los sistemas Bi-Sr-Ca-Cu-O y Tl-Ba-Ca-Cu-O mediante técnicas de evaporación en vacío ” Programa Midas Objectives Advisory Prof. A. Segura • Synthesis of BiSrCaCuO and Tl-Ba-Ca-Cu-O compounds • Study of the resistivity as a function of temperature • Determination of critic temperature and current

6. Crystal growth and characterization of semiconductors Crystal growth laboratory Bulk crystals Sample preparation Epitaxial layers

7. Crystal growth and characterization of semiconductors III-VI Materials II-VI Materials Other Materials

8. Crystal growth and characterization of semiconductors UNIVERSITAT DE VALÈNCIA III-VI SEMICONDUCTORS Objectives • Crystal growth of III-VI materials • Study of physical properties • Physical properties under high presure Advisory Prof. A. Segura Collaborations Teams of Prof R. Pareja Prof. A. Chevy Actividad investigadora

9. Crystal growth and characterization of Semiconductors (III-VI) UNIVERSITAT DE VALÈNCIA “Crecimiento, caracterización y aplicaciones de nuevos materiales semiconductores” CICYT PA86-294 “Crecimiento, caracterización y aplicaciones de semiconductores para la óptica no lineal” CICYT MAT90-0242 “Estudio de propiedades estructurales, ópticas, magnéticas y de transporte de semiconductores bajo altas presiones”

10. Crystal growth and characterization of Semiconductors (III-VI) InSe GaS III-VI Materials Dopado InxGa1-xSe GaTe GaSe Actividad investigadora

11. II-VI Materials Actividad investigadora

12. Crystal growth and characterization of Semiconductors II-VISEMICONDUCTORS Objectives • Crystal growth (bulk and layers) • Alternative methods to the crystal growth and study of optimal conditions • Hidrodynamical study of growth processes • Study of defects and correlation with growth conditions • Luminescence and cathodoluminescence of II-VI materials. • Potential aplications Advisory V. Muñoz-Sanjose Collaborations Teams of Prof. J.A. García Prof. J. Piqueras Prof A. Segura Actividad investigadora

13. Crystal growth and characterizartion of Semiconductors (III-VI) “Crecimiento cristalino y caracterización de cristales semiconductores II-VI, aleaciones y materiales semimagnéticos IIVI-MnVI” (GV-2005/94) “Crecimiento cristalino caracterización y aplicaciones de compuestos II-VI y aleaciones” (MAT98-0975-C02-01) “Crecimiento de capas epitaxiales de semiconductores II-VI y aleaciones a partir de la pirólisis de compuestos organometálicos MOCVD. Aplicaciones a la fotodetección” (1FD97-0086)

14. Crystal growth and characterizartion of Semiconductors (III-VI) “Crecimiento cristalino, caracterización y aplicaciones de capas epitaxiales de semiconductores II-VI (GV01-536) “Crecimiento cristalino y caracterización del óxido de zinc” M .E.C.( MAT 2001-2920-C03-01) “Semiconductor oxides for UV optoelectronics, surface acoustics and spintronics CE (Thematic Network) (G5RT-CT-2002-05075)

15. Crystal growth and characterizartion of Semiconductors (III-VI) “Materiales para la optoelectrónica: el óxido de cinc, crecimiento cristalino y caracterización.” Acción integrada hispano-francesa (Picasso) HF2001-0066 “Crecimiento cristalino, caracterización y aplicaciones de semiconductores II-VI” Generalitat Valenciana CTGCA/2002/3-7 “Crecimiento cristalino, caracterización y aplicaciones de capas epitaxiales” Generalitat Valenciana Acciones Especiales 2003

16. Crystal growth and characterization of Semiconductors HgTe HgxCd1-xTe CdTe II-VI Materials HgxZn1-xTe CdxZn1-xTe ZnTe ZnTexSe1-x ZnSe

17. Crystal growth and characterization of Semiconductors Other materials Objectives Advisory V. Muñoz-Sanjosé Collaborations Teams of Prof A. Segura Prof. J.A. García Dr. I. Terry Dr. R. Triboulet • Crystal growth of semimagnetic materials • Crystal growth of materials with punctual interest • New approachs to the growth techniques • Collaborations

18. Crystal growth and characterization of Semiconductors (semimagnetic and other materials) Crecimiento cristalino y caracterización de cristales semiconductores II-VI, aleaciones y materiales semimagnéticos IIVI-MnVI (GV-2005/94)

19. Crystal growth and characterization of Semiconductors (semimagnetic and other materials) HgxMn1-xTe MnTe CdxMn1-xTe Crystal growth of other materials PbTe Zn3P2 ZnxCo1-xSe Actividad investigadora

20. Experimental facilities

21. Crystal growth laboratory. Bulk materials • Crystal growth laboratory: Epitaxial layers • Other equipments

22. Crystal growth laboratory. Bulk materials • Synthesis of materials • Bridgman method. Horizontal and vertical configurations • Vapor phase transport: • PVT • CVT • Piper - Polish • Solution methods: Traveling Heater Method (THM) y • Cold Traveling Heater Method (CTHM) • Solid phase recrystallization (SPR)

23. Current Projects • Crystal growth, characterization and aplications of II-VI epitaxial layers • Crystal growth and characterization of ZnO and based materials • Semiconductor oxides for UV optoelectronics, surface acoustics and spintronics