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Efficiency and Droop Improvement in InGaN / GaN Light-Emitting Diodes by Selective

Efficiency and Droop Improvement in InGaN / GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation Chao- Hsun Wang, Shih-Pang Chang, Pu-Hsi Ku, Yu-Pin Lan , Chien -Chung Lin,Hao -Chung Kuo , Tien -Chang Lu, Shing -Chung Wang, and Chun-Yen Chang. P.K Lin. 1.

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Efficiency and Droop Improvement in InGaN / GaN Light-Emitting Diodes by Selective

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  1. Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation Chao-Hsun Wang, Shih-Pang Chang, Pu-Hsi Ku, Yu-Pin Lan, Chien-Chung Lin,Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, and Chun-Yen Chang P.K Lin 1

  2. Outline • Introduction • Experiments • Results and Discussion • Conclusion • References 2

  3. Introdution Efficiency and droop behavior in InGaN/GaN light-emitting diodes are both improved using selectively graded composition multiple quantum barriers (SGQBs). In themeantime, the spatial distribution overlap between electrons and holes in the active region could also be well considered. Therefore, the radiativerecombination of the SGQB LED is more efficient than that of the conventional LED. 3

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