Future Component Characterization for EMI Analysis - INCASES Engineering GmbH -

1. Future Component Characterization for EMI Analysis - INCASES Engineering GmbH - O. Rethmeier W. Rissiek

2. Motivation Modern designs use components that are characterized through • increasing package density • increasing package dimension • increasing clock rates • faster transition times • high power consumption • Increasing signal integrity problems • High thermal radiation • Strong electromagnetic fields in the neighborhood of the IC • Package can be as effective as antennas

3. Radiation Effects Differential Mode • Current Loops (e.g. Signal Loops / Bypass Loops) Common Mode • Differential mode - Common mode coupling (Potential Shift in the Supply System) • Radiation through cables and packages

4. Requirements EMI Analysis and SI Analysis requires a • complete • clear • consistant provision of all data and parameters of the design (including component characterization).

5. Component Characterization • Mechanical characterization • highly complex internal structure • often no geometrical information available • Electrical characterisation • e.g. IBIS • Thermal characterization

6. Complexity of Design • In general, a • numerical EMI analysis of the complete design is not possible • memory • computation time • Partitioning of the problem uses • a prior knowledge of an expert approach (more ‘classification’ data) • simplified assumptions (less detailed simulation models)

7. Essential Component Characteristics for EMI-Analysis (I) Geometrical parameter • Package type (e.g. QFP, BGA, PGA,...) • Package dimensions (length, width, height,...) • Pin pitch of the component

8. Essential Component Characteristics for EMI-Analysis (II) Electrical Parameter • Technology • Supply-voltages • Analog, mixed analog / digital • Noise margin • Input- / output behavior • Band width of signal pins • Max. / min. voltage res. currents • Transfer time • Frequency

9. Details on Electrical Parameter Buffer Specific Quantities: Voltages and Currents Voltage positive power supply Vcc V I/O Analysis/Evaluation datasheet negative power supply Vss/GND V I/O Analysis/Evaluation datasheet min. voltage low-level VOLmin V O Analysis datasheet max. voltage low-level VLmax V I/O Analysis/Evaluation datasheet min. voltage high-level VHmin V I/O Analysis/Evaluation datasheet max. voltage high-level VOHmax V O Analysis datasheet Threshold voltage VIt V I Evaluation datasheet Ref.-voltage low/high Def. td VmDR V I/O Evaluation datasheet Ref.-voltage high/low Def. td VmDF V I/O Evaluation datasheet Parameter Symbol Unit Buffer Application Source Currents max. current low-level IOLmax A O Analysis datasheet max. current high-level IOHmax A O Analysis datasheet

10. Details on Electrical Parameter Buffer Specific Quantities: Time and Clock Frequencies Times max. Fall time low/high tTIRmax s I Evaluation datasheet max. Fall time high/low tTIFmax s I Evaluation datasheet typical Fall time low/high tTOR s O Analysis model typical Fall time high/low tTOF s O Analysis model special delay time low/high of an output load circuit tOmDR s O Evaluation model special delay time high/low of an output load circuit tOmDF s O Evaluation model Parameter Symbol Unit Buffer Application Source Clock Frequencies min. work frequency fWmin Hz I/O Analysis datasheet max. work frequency fWmax Hz I/O Analysis datasheet typical work frequency fWtyp Hz I/O Analysis Spec

11. Details on Electrical Parameter Buffer Specific Quantities: Voltages

12. Details on Electrical Parameter Buffer Specific Quantities: Resistance, Capacitance Resistance Input resistance RiW I Analysis model Output resistance low/high ROLHW O Analysis model Output resistance high/low ROHLW O Analysis model Parameter Symbol Unit Buffer Application Source Capacitance Input capacitance CI F I Analysis model Output capacitance CO F O Analysis model

13. Details on Electrical Parameter Derived Quantities Buffer specific Characteristics Band width fOB of a signal at output (fPmin/typ/max, tTOR/F)fIB of a buffer at input (tTIR/Fmax) (static) Noise margin high-level SH = VOHmin - VIH min low-level SL = VILmax - VOLmax VILmax, VIHtop - VHmin Noise potential Classification of radiated / internal noise characteristics from driver parameter into low, medium, high Sensitivity Classification of sensitivity from the receiver parameter into low, medium, high Activity Classification using all parameter into low, medium, high Derived Quantities Explanation

14. Details on Electrical Parameter Derived Quantities Component specific Characteristics Noise potential Classification of the component using all parameter into low, medium, high Sensitivity Classification of the component using all parameter into low, medium, high Activity Classification of the component using all parameter into low, medium,high Derived Quantities Explanation

15. Details on Electrical Parameter Buffer Classification BUS Bus-inputs and outputs; e.g.at bus driver, controller, etc. CLOCK All clock inputs and outputs; e.g. at flip-flop, counters, processor, etc. CTRL Control inputs like Reset, RAS, CAS, WE, OE, DIR, etc. DATA Data inputs and outputs like gates, memory components, etc. SUPPLY Supply pins of all components Signal Class Explanation HYPOTHETIC Pins that cannot be assigned to other classes DEFAULT

16. Summary EMI - Analysis of PCB’s requires • behavioral buffer models like IBIS • additional ‘classification’ parameters for an expert approach • specific geometrical package information • Extension of current standardization required!