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Pro and Cons about Ge IPL for III-V

Pro and Cons about Ge IPL for III-V. Literature survey. Issues with MBE Ge on III-V. High temp (400C) required for good Epi quality As background contaminates Ge layer Solved by two chamber systems (dedicate Ge growth w/o As) Must bake the As from the Mo platen

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Pro and Cons about Ge IPL for III-V

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  1. Pro and Cons about Ge IPL for III-V

  2. Literature survey

  3. Issues with MBE Ge on III-V • High temp (400C) required for good Epi quality • As background contaminates Ge layer • Solved by two chamber systems (dedicate Ge growth w/o As) • Must bake the As from the Mo platen • Must pump the As from the III-V before Ge shutter open • Must avoid As to contaminate Ge source • Grow GaAs to Ga rich after initial (In)GaAs buffer growth • Ga diffusion (substitutional) into Ge • Need to below 300C • low temp Epi yields poor Ge quality • In diffusion to Ge is not well known.

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