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PHY 5660: Semiconductor Physics and Devices

PHY 5660: Semiconductor Physics and Devices. Total of 39 hours Lectures. References. M. Balkanski and R. F. Wallis, Semiconductor physics and applications , Oxford University Press (Oxford, 2000). QC611.B185 2000

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PHY 5660: Semiconductor Physics and Devices

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  1. PHY 5660: Semiconductor Physics and Devices Total of 39 hours Lectures

  2. References • M. Balkanski and R. F. Wallis, Semiconductor physics and applications, Oxford University Press (Oxford, 2000). QC611.B185 2000 • Peter Y. Yu, M. Cardona, Fundamentals of semiconductors, Springer (Berlin, 2005)  QC611 .Y88 2005 • S. M. Sze (ed.), Modern semiconductor device physics, John Wiley & Sons, Inc. (New York, 1998) QC611.M674 1998 • C. Weisbuch, B. Vinter, Quantum semiconductor structures, Academic Press, Inc. (Boston, 1991) QC611.W38 • K. Seeger, Semiconductor physics, Springer (Berlin, 1999) QC611.S43 1999 • H. T. Grahn, Introduction to semiconductor physics, World Scientific (Singapore, 1999) QC611.G73 1999 • R. Enderlein, N. J. M. Horing, Fundamentals of semiconductor physics and devices, World Scientific (Singapore, 1997) QC611.E655 1997 • S.M. Sze & K. K. Ng, Physics of semiconductor devices, 2007, QC612.S4.S95 2007

  3. Chapter 1: Structures of semiconductors

  4. What do you know about a semiconductor? • Resistivity is between a metal and an insulator • Resistivity decreases with temperature, vs, resistivity of metal increases with temperature • Photoconductivity: light illumination increases conductivity • Rectifier: it conducts when forward biased in p-n diode and Schottky diode • Transistor: discovered by Bardeen and Brattain

  5. Inventors of the transistor: William Shockley (seated), John Bardeen (left) and Walter H. Brattein (right) in 1948. They received the Nobel Prize in Physics in 1956. The first point-contact transistor invented in 1947.

  6. Review: Structure of Solid

  7. Lattice

  8. Common structures and chemical bonding of semiconductors

  9. Diamond Structure Group IV elements such as Si and Ge Two interpenetrating fcc structures displaced with respect to each other along (111) direction by one quarter the body diagonal of the elemental cube The basis two atoms locate at (0,0,0) and (1/4,1/4,1/4,)a The hard sphere filling factor is only 0.34 Simple fcc is 0.74. There are 4 first nearest neighbors ? second nearest neighbors

  10. Zincblende Structure III-V semiconductor such as GaAs and InSb Two fcc structures displaced with respect to each other along (111) direction by one quarter the body diagonal of the elemental cube The basis two atoms locate at (0,0,0) and (1/4,1/4,1/4,)a The hard sphere filling factor is only 0.34 ? Simple fcc is 0.74. There are 4 first nearest neighbors ? second nearest neighbors Ga: (1s)2(2s)2(2p)6(3s)2(3p)6(4s)2(4p) As: (1s)2(2s)2(2p)6(3s)2(3p)6(4s)2(4p)3 How to construct sp3 orbitals?

  11. Wurtzite Structure II-V semiconductor such as CdS Cd: (1s)2(2s)2(2p)6(3s)2(3p)6(4s)2(4p)6(5s)2 S: (1s)2(2s)2(2p)6(3s)2(3p)4 How to construct sp3 orbitals?

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