1 / 14

Vishwani D. Agrawal James J. Danaher Professor Department of Electrical and Computer Engineering

ELEC 5970-001/6970-001(Fall 2005) Special Topics in Electrical Engineering Low-Power Design of Electronic Circuits Dynamic Power: Transistor Sizing. Vishwani D. Agrawal James J. Danaher Professor Department of Electrical and Computer Engineering Auburn University

jamar
Download Presentation

Vishwani D. Agrawal James J. Danaher Professor Department of Electrical and Computer Engineering

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. ELEC 5970-001/6970-001(Fall 2005)Special Topics in Electrical EngineeringLow-Power Design of Electronic CircuitsDynamic Power: Transistor Sizing Vishwani D. Agrawal James J. Danaher Professor Department of Electrical and Computer Engineering Auburn University http://www.eng.auburn.edu/~vagrawal vagrawal@eng.auburn.edu ELEC5970-001/6970-001 Lecture 7

  2. Cg Delay of a CMOS Gate Intrinsic capacitance Gate capacitance CMOS gate Cint CL Propagation delay through the gate: tp = 0.69 Req(Cint + CL) ≈ 0.69 ReqCg(1 + CL /Cg) = tp0(1 + CL/Cg) ELEC5970-001/6970-001 Lecture 7

  3. Req, Cg, Cint, andWidth Sizing • Req: equivalent resistance of “on” transistor, proportional to L/W; scales as 1/S, S = sizing factor • Cg: gate capacitance, proportional to CoxWL; scales as S • Cint: intrinsic output capacitance ≈ Cg, for submicron processes • tp0: intrinsic delay = 0.69ReqCg; independent of sizing ELEC5970-001/6970-001 Lecture 7

  4. Effective Fan-out, f • Effective fan-out is defined as the ratio between the external load capacitance and the input capacitance: f = CL/Cg tp = tp0(1 + f ) ELEC5970-001/6970-001 Lecture 7

  5. Cg1 Cg2 Sizing an Inverter Chain 1 2 N CL Cg2 = f2Cg1 tp1 = tp0 (1 + Cg2/Cg1) tp2 = tp0 (1 + Cg3/Cg2) N N tp = Σtpj = tp0Σ (1 + Cgj+1/Cgj) j=1j=1 ELEC5970-001/6970-001 Lecture 7

  6. Minimum Delay Sizing Equate partial derivatives of tp with respect to Cgj to 0: 1/Cg1 – Cg3/Cg22 = 0, etc. Cg22 = Cg1×Cg3, etc. Cg2/Cg1 = Cg3/Cg2, etc. i.e., all stages are sized up by the same factor f with respect to the preceding stage: CL/Cg1 = F = fN, tp = Ntp0(1 + F1/N) ELEC5970-001/6970-001 Lecture 7

  7. Minimum Delay Sizing Equate partial derivatives of tp with respect to N to 0: dNtp0(1 + F1/N) ───────── = 0 dN i.e. F1/N – F1/N(ln F)/N = 0 or ln f = 1 → f = e = 2.7 and N = ln F ELEC5970-001/6970-001 Lecture 7

  8. Sizing for Energy Minimization Main idea: For a given circuit, reduce energy consumption by reducing the supply voltage. This will increase delay. Compensate the delay increase by transistor sizing. Ref: J. M. Rabaey, A. Chandrakasan and B. Nikolić, Digital Integrated Circuits, Second Edition, Upper Saddle River, New Jersey: Pearson Education, 2003. ELEC5970-001/6970-001 Lecture 7

  9. CL Cg1 Sizing for Energy Minimization f 1 tp = tp0 [(1+f) + (1+F/f )] = tp0(2+ f + F/f ) F = CL/Cg1 tp0 ~ VDD/(VDD - Vt) Energy dissipation, E = VDD2Cg1(1 + f + F ) ELEC5970-001/6970-001 Lecture 7

  10. Holding Delay Constant • Reference circuit: f = 1, supply voltage = Vref • Size the circuit such that the delay of the new circuit is smaller than or equal to the reference circuit: tp tp0(2+f+F/f ) VDD Vref -Vt 2+f+F/f ── = ──────── = ── ──── ───── ≤ 1 tpref tp0ref (3+F ) Vref VDD -Vt 3+F ELEC5970-001/6970-001 Lecture 7

  11. Supply Voltage Vs. Sizing 3.5 3.0 2.5 2.0 1.5 1.0 Vref = 2.5V Vt= 0.5V F=1 2 5 fopt ≈ √F VDD (volts) 10 1 2 3 4 5 6 f ELEC5970-001/6970-001 Lecture 7

  12. Energy E VDD22 + 2f + F ── = ─── ────── Eref Vref2 4 + F ELEC5970-001/6970-001 Lecture 7

  13. Normalized Energy Vs. Sizing 1.5 1.0 0.5 Vref = 2.5V Vt = 0.5V F=1 2 5 fopt≈ √F Normalized Energy 10 1 2 3 4 5 6 f ELEC5970-001/6970-001 Lecture 7

  14. Summary • Device sizing combined with supply voltage reduction reduces energy consumption. • For large fan-out energy reduction by a factor of 10 is possible. • An exception is F = 1 case, where the minimum size device is also the most effective one. • Oversizing the devices increases energy consumption. ELEC5970-001/6970-001 Lecture 7

More Related