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Chapter 13 Small-Signal Modeling and Linear Amplification. Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock. Small-Signal Model of BJT. Using 2-port y -parameter network,
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Chapter 13Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock Microelectronic Circuit Design, 3E McGraw-Hill
Small-Signal Model of BJT Using 2-port y-parameter network, The port variables can represent either time-varying part of total voltages and currents or small changes in them away from Q-point values. bo is the small-signal common-emitter current gain of the BJT. Microelectronic Circuit Design, 3E McGraw-Hill
Hybrid-Pi Model of BJT Transconductance: Input resistance: • The hybrid-pi small-signal model is the intrinsic representation of the BJT. • Small-signal parameters are controlled by the Q-point and are independent of geometry of the BJT Output resistance: Microelectronic Circuit Design, 3E McGraw-Hill
Equivalent Forms of Small-Signal Model for BJT • Voltage -controlled current source gmvbe can be transformed into current-controlled current source, • Basic relationship ic = bib is useful in both dc and ac analysis when BJT is in forward-active region. Microelectronic Circuit Design, 3E McGraw-Hill
Small-Signal Model for the MOSFET Using 2-port y-parameter network, The port variables can represent either time-varying part of total voltages and currents or small changes in them away from Q-point values. Microelectronic Circuit Design, 3E McGraw-Hill
Small-Signal Parameters of MOSFET Transconductance: Output resistance: • Since gate is insulated from channel by gate-oxide input resistance of transistor is infinite. • Small-signal parameters are controlled by the Q-point. • For same operating point, MOSFET has higher transconductance and lower output resistance that BJT. Amplification factor for lVDS<<1: Microelectronic Circuit Design, 3E McGraw-Hill