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Leaders in Light Perfect for Raman

Leaders in Light Perfect for Raman. Torsana Laser Technologies A/S. Founded 1996 100% owned by Juel Nielsen Holding A/S Based on a 50-year old tradition of consistent innovation. Perfect for Raman microscopy. Starbright technology advantages:

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Leaders in Light Perfect for Raman

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  1. Leaders in Light Perfect for Raman

  2. Torsana Laser Technologies A/S • Founded 1996 • 100% owned by Juel Nielsen Holding A/S • Based on a 50-year old tradition of consistent innovation

  3. Perfect for Raman microscopy Starbright technology advantages: • Ultra high spectral and spatial resolution enabled by excellent beam quality and line width • Very high sensitivity due to effective repression of ASE • Short acquisition time with high power • Flawless stability in wavelength and power • Claim ratio is less than 2 % on all end users since August 2005

  4. Strong wavelength stability

  5. Excellent spectral resolution enabled Courtecy of Jasco

  6. Tapered diode • Single mode diode with integrated amplifier structure • Enbles combined advantages of single mode diode reliability and life time, with the high output power ensured by the integrated amplifier

  7. Impeccable quality performance • Claim ratio is less than 2 % on all end users • Since August 2005

  8. Quality assurance • Carefully selected diode manufacturer, producing to our specifications. • Rigorous testing and selection of diodes. • Special cavity design and electronics ensures correct optical and electrical operating environment for the diode. This removes unwanted optical stress for the diode, which could have long term effects.

  9. Quality assurance • Highest precision specification measurement report for each laser including simulation of room temperature change. • Strong destructive temperature cycling performed on each cavity to ensure long-term alignment stability. • 300 hrs performance test on each laser before shipment.

  10. Extensive testing procedures • A-test Verifying specification fulfilment, By monitoring stability of wavelength and power, plus single frequency operation, in changing external/ambient temperature conditions: 20-> 30-> 20. • Temperature stress cycling procdure with the diode turned off. Internal temperature of the laser is temperature is rapidly and strongly cycled up and down. • B-test Verifying long term alignment immobility of components. By ensuring performance is completely unchanged, after the temperature stress cycling procedure. Comparing test A and B. • Long term running, for 300 hours. • End test Verifying specification fulfilment again, The same way as the A-test. • Individual test report as above is shipped with each laser.

  11. Example of A, B & End testing

  12. Temp. stress cycling procedure

  13. Example of Long term running

  14. Starbright 785 XM • Wavelength 785 nm • Output power 500 mW • Beam quality: M2 < 1.7 • Line width 10-15 MHz, single frequency

  15. Starbright 785 L • Wavelength 785 nm • Output power 120 mW • Beam quality: M2 < 1.7 • Line width 10-15 MHz, single frequency

  16. Starbright 785 S • Wavelength 785 nm • Output power 500 mW • Beam quality: Horizontal: M2 < 1.3, Vertical: M2 < 15 • Line width < 0.1 nm (from 20 – 30 C)

  17. Starbright 1064 XM • Wavelength 1064 nm • Outout power 1000 mW • Beam quality: M2 < 2 • Line width 10-15 MHz, single frequency

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