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WP2: Materials for security

WP2: Materials for security Development and Device Applications of APDs for Operation in a Photon-Starved Regime. Student: Flavio Nucciarelli. Supervisor:. Guillermo Román, PhD. Prof. Jose Luis Pau. Name Flavio Nucciarelli Nationality Italian

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WP2: Materials for security

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  1. WP2: Materials for security Development and Device Applications of APDs for Operation in a Photon-Starved Regime Student: Flavio Nucciarelli Supervisor: Guillermo Román, PhD Prof. Jose Luis Pau

  2. Name Flavio Nucciarelli Nationality Italian Date of bith 28/06/1989 Address Calle Arapiles 19, 4 izq, 28015 Madrid (Spain) E-mail nccflv@Gmail.com (2011) Bachelor’sdegree in ElectronicEngineering at University of Rome “La Sapienza” (vote 96/110) Education (2014) Master’sdegree in Nanotechnology at University of Rome “La Sapienza” (vote 110/110) (2015- ) PhD in “Advancedmaterials and nanotechnology” at UniversityAutonomous of Madrid “UAM”

  3. (2007) EUROPASS Project at Instituto Nacional de Técnica Aeroespacial (INTA-SPAIN) Calibration and measurement with ENAC certification (1 month) Training Experience (2011) Campus at MicronTechnology,Avezzano (ITALY) Study of imagesensorsbasedon CMOS technology (Bachelor’sthesis 10 dayssecondment) (2014) UniversityCollege of London, Department of Electronic and ElectricalEngineering (UK) Design and simulation of photonicdevicesbasedonliquidcrystals (Master’sthesis 2 monthsecondment)

  4. Project: Development and Device Applications of APDs for Operation in a Photon-Starved Regime • Investigation of innovative metamaterials to improve the performances of light sensors: • Antireflective coatings (ARC) based on metal nanostructures Comparing to normal ARC: θ Higher acceptance angle Easier tunability • Preparation of metal nanoparticle colloids • Possible market application: • Free space communication devices • (Bio)sensing applications

  5. Background: NPs effects on sensor The NPs ARRAY on a surface can act as an EQUIVALENT HOMOGENOUS LAYER (εeff ,neff) By the MAXWELL-GARNETT theory, it is possible to calculate the EFFECTIVE PERMITTIVITY of the equivalent layer as: 200 nm ZERO REFLACTANCE CONDITION can be achieved with the use of the following equation:

  6. Preparation and characterization of Ga NPs Evaporation process Substrates Ga NP structure Technique: PVD Target: Ga Time: 5 ÷120 s DC Power: 50 W Vacuum: 3×10-6 Torr Silicon or Glass Thermal treatment Allows to change the Ga NPs distribution Allows to change the outer gallium oxide thickness & Acid etching treatment Before etching After etching Optical characterization Fourier Transform Infrared spectroscopy (IR range) Ellipsometry (UV/Vis range)

  7. = GaNPs + Glass substrate Reflection Lower reflectivity hv R Transmission hv Higher transmission T

  8. APD characterization SENSOR Electrical characterization after NPs thermal treatments Average NPs diameter = 23 nm Optical signal enhancement

  9. GaNPs colloidal solution preparation Step 1 Step 2 Step 3 AZO layer AZO layer AZO Sputtering deposition Galium Evaporation Silicon Sub Sub AZO etching (30’’- 40’’) + Waterdipping(5’) ULS 1.5 mL solvent Ga NPs colloidal solution Drop casting on optoelectronic devices Sub Step 4 Step 5 Step 6 Sensing application

  10. Spectroscopic absorption & application Spectrophotometer UV/vis range Strong UV absorption suitable for several applications Reactive NPs with specific DNA chain target Ga NPs as drug delivery target for tumour diseases Ga NPs as Anode material for Li-ion battery

  11. Summary • Development of antireflective coating based on Gallium nanoparticles • Study of the Gallium nanoparticles effects on real APD sensor • Development of Gallium nanoparticles colloidal solution for different application (IR sensor and biosensing)

  12. Skills acquired Deposition techniques Sputtering, PVD evaporation Optical analysis Spectroscopy, Ellipsometry, Dynamic light scattering (DLS) Electric characterization I-V characteristic measurments Chemical characterization pH measurement, chemical attack and sample preparation

  13. Outputs • MBE2016 conference - Poster session • SPIE OPTICS 2017 (Prague) submission • 2 papersunderpreparation Secondment • (Oct 2016) Sheffield University (UK) • Basics on design, fabrication and characterization of an APD device • (2 weeks)

  14. Future works • Optimization of Ga NPs antireflective coating for APD sensor • Use of NP plasmonic resonance for spectral selective antireflective coating • Study of the angular acceptance response

  15. Aspirations • Working in R&D for public or private institutions • Personal and public recognition • Gathering new cultural knowledge

  16. Thank you for the attention

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