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Diodes

Diodes. Ping Hsu Buff Furman John Luk. Power Source. Signal Conditioning. Power Interface. User Interface. Actuator. Sensor. System to Control. ME 110 ME 136 ME 154 ME 157. ME 182 ME 189 ME 195. Mechatronics Concept Map. ME 106 ME 120. Controller (Hardware & Software). ME 106

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Diodes

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  1. Diodes Ping Hsu Buff Furman John Luk

  2. PowerSource SignalConditioning PowerInterface UserInterface Actuator Sensor System toControl ME 110 ME 136 ME 154 ME 157 ME 182 ME 189 ME 195 Mechatronics Concept Map ME 106 ME 120 Controller(Hardware & Software) ME 106 ME 190 ME 187 ME 106 INTEGRATION ME 106 ME 120 ME 106 ME 154 ME 157 ME 195 ME 120 ME 297A BJ Furman 26JAN06

  3. Diode Types and Circuit Symbols • Diode Types • Signal Diodes • Rectifier Diodes • Light Emitting Diodes • Zener Diodes Symbol: Anode(P) Cathode(N) Actual Device: Anode(P) Cathode(N)

  4. P-N Junction – Forward Bias A Diode is formed by A junction between positively and negatively doped semiconductor material • P Type • Doped with Boron or Gallium(1 Less e-) • N Type • Doped with Arsenic or Phosphorous(1 Extra e-) Anode(P) Cathode(N) P N Holes e- Net current + -

  5. P-N Junction – Reverse Bias • P Type • Doped with Boron or Gallium(1 Less e-) • N Type • Doped with Arsenic or Phosphorous(1 Extra e-) Anode(P) Cathode(N) P N Holes e- No net current -+

  6. I-V Characteristic for a Diode (non-linear) = 1/R I IV Characteristic for a Resistor Reverse Bias V Breakdown Voltage50-1000V 0.6 to 0.7 V for silicon diode Forward Bias Anode Voltage higher than Cathode

  7. Example 1 • Find VD, IR, VR • VD = -10V, VR = 0, IR = 0 + VD - - 10V + + VR- IR

  8. Example 2 • Find VD, IR, VR , R = 1Ω VD = 0.7V VR = 10 – 0.7 = 9.3V IR = 9.3 / 1 =9.3A + VD - + 10V - + VR- IR

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