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SPECIAL DIODES

SPECIAL DIODES. P. SYAM SUNDAR ASSOCIATE PROFESSOR DEPT. OF ECE K L UNIVERSITY. SPECIAL DIODES. ZENER DIODE SCHOTTKY – BARRIER DIODE (SBD) VARACTOR DIODE PHOTO DIODE LIGHT EMITTING DIODE (LED). ZENER DIODE. i. -V Z0. -V Z. -V ZK. 0. SYMBOL. V. -I ZK. -. +. Q. Slope = 1/ r Z.

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SPECIAL DIODES

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  1. SPECIAL DIODES P. SYAM SUNDAR ASSOCIATE PROFESSOR DEPT. OF ECE K L UNIVERSITY

  2. SPECIAL DIODES • ZENER DIODE • SCHOTTKY – BARRIER DIODE (SBD) • VARACTOR DIODE • PHOTO DIODE • LIGHT EMITTING DIODE (LED)

  3. ZENER DIODE i -VZ0 -VZ -VZK 0 SYMBOL V -IZK - + Q Slope = 1/rZ VZ -IZT IZ IZK – Knee Current (from data sheets) IZT – Test Current VZ – Zener Voltage rZ – Incremental (Dynamic) Resistance ΔV ΔI ΔV = ΔI rZ

  4. Used in designing Voltage Regulators • Operate in Break down region • Current flows in to cathode • Cathode positive w.r.t. anode • Can operate safely up to 70 mA • VZO and VZK are approximately equal • The dependence of Zener Voltage on temperature is given by Temperature coefficient TC or temco. VZ = VZO + rZIZ For IZ > IZK and VZ > VZO

  5. SCHOTTKY BARRIER DIODE (SBD) • It is a metal-semiconductor (MS) diode. (These are the oldest diodes). • Metal contact with moderately doped n type material. • The general shape of the Schottky diode and I-V characteristics are similar to PN junction diodes, but the details of current flow are different. • In a PN junction diodes, current is due to • Recombination in the depletion layer under small forward bias. • Hole injection from p+ side under larger forward bias. • In a Schottky diodes current is due to • Electron injection from the semiconductor to the metal.

  6. SCHOTTKY BARRIER DIODE (SBD)

  7. V – I cHARECTERISTICS where B is Schottky barrier height, VAis applied voltage, Ais area, A* is Richardson’s constant.

  8. V – I cHARECTERISTICS • Current is conducted by majority carrier (electrons). • Switching speed of the SBD is much higher. • The forward voltage of SBD is lower than that of PN junction • diode.

  9. VARACTOR DIODE • VariableCapacitors • Transition capacitance under reverse bias • Diffusion capacitance under forward bias • Used in automatic tuning of radio receivers

  10. VARACTOR DIODE

  11. PHOTO DIODE • Used to convert light to electric signal • Reverse biased PN diode is exposed to light • Photons liberated causes breakage of covalent bonds • Liberation of electron – hole pairs • Results in flow of reverse current across the junction called photo current • Photo current is proportional to intensity of light

  12. PHOTO DIODE

  13. LIGHT EMITTING DIODE (LED) • The operation is inverse to that of a photo diode • It converts forward current in to light • Minority carriers are injected across the junction and diffuse • in to P & N regions • Minority carriers recombine with majority carriers emitting photons • Use direct band gap materials like Gallium Arsenide • Light emitted proportional to the no. of re-combinations • Wide range of applications in different types of displays

  14. LEDapplications • Display instruments like DVMs • Colourful lights • Produce coherent light with narrow band width (Laser Diode – used in CD Players & Optical communications) • Opto-isolator – combination of LED and Photo diode used to reduce electrical interference on signal transmission in a system and used in digital system design and design of medical instruments to reduce risk of electric shock to patients

  15. LIGHT EMITTING DIODE (LED)

  16. Direct band gap semiconductors used for LEDs: Galium Arsenide (Ga As) • Gallium Antimony (GaSb) • Arsenic, Antimony, Phosphorous • Impurities added: Group – II materials like Zinc (Zn), Magnesium (Mg), Cadmium (Cd) • Donors: Group – VI materials like Tellicum (Te), Sulphur (S) etc… • Impurity Concentration: 1017– 1018 /cm3 for donor atoms and • 1017 – 1019/cm3 for Acceptor atoms • Colours:Gallium Phosphide – Zinc Oxide RED • Gallium Phosphide – N GREEN • Silicon Carbide – SiCYELLOW • Gallium Phosphide, P, N AMBER

  17. LIGHT EMITTING DIODE (LED)

  18. SEMICONDUCTORS SYMBOLS

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