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Compositional dependence of damage buildup in Ar - ion bombarded Al x Ga 1-x N

Soltan Institute for Nuclear Studies. Compositional dependence of damage buildup in Ar - ion bombarded Al x Ga 1-x N. Karolina Danuta Pągowska. Outline. 1. Energy loss of ions in solids, collision cascade 2. Ion implanter 3. FET 4. RBS and channeling

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Compositional dependence of damage buildup in Ar - ion bombarded Al x Ga 1-x N

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  1. Soltan Institute for Nuclear Studies Compositional dependence of damage buildup in Ar - ion bombarded AlxGa1-xN Karolina Danuta Pągowska

  2. Outline 1. Energy loss of ions in solids, collision cascade 2. Ion implanter 3. FET 4. RBS and channeling 5. Channeling spectra for ion bombarded GaN 6. Multi-step damage accumulation in irradiated crystals 7. Summary

  3. 0 1 2 3 4 5 6 Depth/ µm Energy - Depth – Relation for 1.5 MeV He–ions in Si Rp = 5.21 µm

  4. Energy loss of ions in solids He ions Ar ions Energy loss He ions Ar ions Ionization dEe/dx Displace- ments dEn/dx Ion velocity ~ (Energy)1/2

  5. Collision cascade

  6. Accelerator Wobbler Magnetic separator Magnetic lenses Target chamber Extraction Ion source Ion implanter

  7. Ion beam Mask Sample Ion implantation in compound semiconductors and their heterostructures in usually performed for: • Doping • Insulating region formation (patterned implantation)

  8. Ion beam Mask Si substrate Field – Effect Transistor (FET)

  9. SiO2 Si SOI – Silicon On Insulator

  10. x0 x0 Energy Depth 4He, 2 MeV Si SiO2 x0 - O - Si Principles of Rutherford Backscattering Spectrometry Yield Detector

  11. Ion channeling

  12. Defect analysis using ion channeling Short summary of HRXRD superlattice analysis

  13. Channeling spectra for ion implanted GaN

  14. Experiment and simulation

  15. Distribution of displacement atoms

  16. Schematic representation of the MSDA model a Low fluence Stage 1 Structure C Structure B Structure A Structure A b Medium fluence Stage 2 Structure B Structure C A  B Structure A Structure B Structure A c High fluence Stage 3 Structure C B  C Structure B Structure B Structure A A  B Structure C Structure A

  17. Simulation multi-step accumulation

  18. Three-step accumulation For GaN fd1=6 sig1=0.77 fd2=68.5 sig2=0.0398 x2=12.5 fd3=100 sig3=0.008 x3=400

  19. Three-step accumulation

  20. Two-step accumulation For AlGaN fd1=6 sig1=0.86 fd2=54 sig2=0.015 x2=5

  21. Two-step accumulation

  22. For AlNfd1=7sig1=0.245fd2=63.5sig2=0.02x2=10 Two-step accumulation

  23. Two-step accumulation

  24. Summary

  25. Thanks forattention

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