1 / 20

Thermally Induced Stress in a Glass-Silicon Bonded MEMS Micro-Structure A Finite Element Analysis ( FEA ) using flexPDE

Thermally Induced Stress in a Glass-Silicon Bonded MEMS Micro-Structure A Finite Element Analysis ( FEA ) using flexPDE. Craig E. Nelson - Consultant Engineer. The purpose of this numerical experiment is to learn about the field distribution of stress and strain in a MEMS microstructure.

kaliska
Download Presentation

Thermally Induced Stress in a Glass-Silicon Bonded MEMS Micro-Structure A Finite Element Analysis ( FEA ) using flexPDE

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Thermally Induced Stress in a Glass-Silicon Bonded MEMS Micro-Structure A Finite Element Analysis ( FEA ) using flexPDE Craig E. Nelson - Consultant Engineer

  2. The purpose of this numerical experiment is to learn about the field distribution of stress and strain in a MEMS microstructure. This knowledge helps the engineer to better understand the stress on a bond line as will occur when anodic bonding of glass and silicon is attempted. In this model, a high bonding temperature is impressed on all parts which subsequently cool to room temperature. As the material cools, it shrinks differing amounts in different materials and in different places within a given material, thus “freezing in” stress that, unless relieved, will exist for the life of the bonded part. Depending on circumstances, the bond line may be sufficiently stressed to fail during the cooling process.

  3. Silicon Wafer Anodic Bond Line Glass Silicon Wafer Anodic Bond Line Model Geometry

  4. Shrinkage Shrinkage Strained Structure – Shrinkage is Greatly Magnified

  5. Temperature Gradient During Cooling

  6. Strain Distribution Field – Horizontal Direction

  7. Strain Distribution Field – Vertical Direction

  8. Strain Distribution Field – Vector Plot

  9. Stress Distribution Field – Horizontal Direction

  10. Stress Distribution Field – Vertical Direction

  11. Shear Stress Distribution Field

  12. Stress Distribution Field – Tension

  13. Principal Stress Distribution Field – Horizontal Component

  14. Principal Stress Distribution Field – Vertical Component

  15. Angle of Principal Stress Distribution Field

  16. Von Mises Stress Distribution Field

  17. Strain Distribution Field – Horizontal Component

  18. Stress Distribution Field – Horizontal Component

  19. Stress Distribution Field – Vertical Component

  20. Summary and Conclusions A finite element model has been developed that allows insight into the field distribution of stress and strain in an anodic bonded glass-silicon MEMS microstructure. This knowledge helps the engineer to better understand the stress and strain on the glass-silicon bond line and other parts of the solution domain. The model could be further developed in many further ways.

More Related