500 likes | 683 Views
Computational Nanoelectronics. A. A. Farajian Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan In collaboration with K. Esfarjani, K. Sasaki, T.M. Briere, R.V. Belosludov, H. Mizuseki, M. Mikami, Y.Kawazoe, and B.I. Yakobson.
E N D
Computational Nanoelectronics A. A. Farajian Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan In collaboration with K. Esfarjani, K. Sasaki, T.M. Briere, R.V. Belosludov, H. Mizuseki, M. Mikami, Y.Kawazoe, and B.I. Yakobson
Overview: Molecular electronics insertion strategy; Active atom wire interconnects • Keeping the initial target application simple, cheap and unsophisticated: passive interconnects • Initial products will be silicon complements with response time of the order of second: sensors • Moving on to active devices, with novel function, form, or cost advantage • Finally; introducing entirely new generation of products: commercial delivery time of more than one decade Molecular Electronics J.M. Tour, World Scientific (2003)
(a) 4 nm (b) 2 nm Doping with C60- and Cs+Credit: G.-H. Jeong
Formation of junction between emptyand Cs+ –doped parts Credit: G.-H. Jeong
Specific systems within the prescribed scheme: • Shielded, passive/active, molecular wires: polythiophene/polyaniline inside cyclodextrines • Building upon the existing silicon base: Bi line on Si surface • Active (rectifying) device: doped nanotube junction • How good is DNA? Cheking DNA’s transport
Ab initio calculation:band structures of light and heavy dopings
Ab initio calculation:density of states of light and heavy dopings
Screening charge pattern for doped metallic junction (initial shifts of chemical potentials: 2.5 eV)
Screening charge pattern for doped semiconducting junction(initial shifts of chemical potentials: 2.5 eV)
Screening charge pattern of (5,5) for an external point charge 1.0 e
Hamiltonian and overlap • Using the above-mentioned basis, the Hamiltonian of the system is obtained using Gaussian 98 program • Moreover, as the basis is non-orthogonal, the overlap matrix is also obtained • The Hamiltonian and overlap matrices are then used in calculating the conductance of the system using the Green’s function approach
Conductance, alternative derivation • Conductance [2e2/h]: • With • Being the Green’s function of the molecule (junction part of the system)
Surface Green’s functions • And • With Σ1(2) being the surface terms describing the semi-infinite parts attached to the junction part • Finally
Spatial Extension of MOs(n~80; E~0.3) HOMO LUMO LUMO+n
DNA conductance perpendicular to axisin collaboration with T.M. Briere Au(111) STM Tip Au(111) Substrate
Two stable positions for Cs along diagonal direction Rectifying effect New nearly flat bands via doping Alignment of Frmi energy and van Hofe singularity: possibility of superconductivity In DNA transport, dominant current-carrying states are localized on the hydrogen bonds A high density of states does not necesserarily mean high conductance AT and CG have different conductance due to differently localized states Conclusions: