1 / 13

Exciton formation in graphene bilayer

Exciton formation in graphene bilayer. PHYSICAL REVIEW B 78 , 045401 (2008) Raoul Dillenschneider, and Jung Hoon Han. Presented by Wan-Ju Li 02/25/2009. PHYSICAL REVIEW B 78 , 121401(R) (2008). Outline. Introduction Main work Summary and Conclusion Assumptions and Comments

karl
Download Presentation

Exciton formation in graphene bilayer

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Exciton formation in graphene bilayer PHYSICAL REVIEW B 78, 045401 (2008) Raoul Dillenschneider, and Jung Hoon Han Presented by Wan-Ju Li 02/25/2009 PHYSICAL REVIEW B 78, 121401(R) (2008)

  2. Outline • Introduction • Main work • Summary and Conclusion • Assumptions and Comments • Excitonic Superfluidity

  3. Introduction • Exciton: Bound state of an electron and an hole in an insulator or semiconductor ; Coulomb-correlated electron-hole pair. • Exciton in bilayer systems(semiconductors): • Strong magnetic field • All electrons reside in the lowest Landau Level • Electron-hole pairs form because of Coulomb attraction J. P. Eisenstein and A. H. MacDonald, Nature London 432, 691 (2004)

  4. Introduction(cont.) • Why Graphene? 1. It is atomically two dimensional. 2. Perfect particle-hole symmetry • Lecture note 1 of phy570X; • 2. E. McCann, D.S.L. Abergel, and Vladimir I. Fal’ko,European Physical Journal-special topics 148, (2007)

  5. Main work • The possibility of an excitonic instability in the biased graphene bilayer in the framework of Hartree-Fock theory Bernal stacking

  6. Main work (cont.) :The bare kinetic energy within the monolayer

  7. Main work-nearest (U1)

  8. Main work-nearest (U1)(cont.)

  9. Main work-second nearest(U2)

  10. Main work-(U2)(cont.)

  11. Summary and Conclusion • The short-ranged Coulomb interaction was introduced for both nearest U1 and second nearest U2 between the two layers. • The critical strength is U1c / t ~3.5 for a bias V/t~1; U2c / t~1.5 at V/ t~1. • Doping by applying the voltage difference between the bilayer can control the excitonic properties of the graphene bilayer. • intercalation of nondoping and insulating atomic layers between the carbon layers could reduce significantly in such a way that the screened Coulomb interaction U obeys the condition U>Uc and excitons could form.

  12. Assumptions and Comments • Band truncation (Low energy approximation) • short-range Coulomb interaction: up to second nearest neighbor • Same-spin electron-hole exciton • Interlayer distance? • Consider U1 and U2 separately • Using different “order parameters” in the calculations for U1 and U2 cases • Exciton formation and BEC

  13. Superfluidity • Bose-Einstein Condensation of Excitons • Room-temperature superfluidity in Graphene bilayer system 1. Hongki Min, Rafi Bistritzer, Jung-Jung Su, and A. H. MacDonald, Physical Review B 78, 121401(R) (2008); 2. J. P. Eisenstein and A. H. MacDonald, Nature 432, 691 (2004); 3. Jung-Jung Suand A. H. MacDonald ,Nature Physics  4, 799 (2008)

More Related