1 / 2

Intellectual Merit Measures electrical properties of bilayer and trilayer graphene devices.

Intrinsic Gaps in Bilayer and Trilayer Graphene Chun Ning Lau, University of California-Riverside, DMR 0748910. Intellectual Merit Measures electrical properties of bilayer and trilayer graphene devices. Devices are suspended with top and back gates (top figure)

bran
Download Presentation

Intellectual Merit Measures electrical properties of bilayer and trilayer graphene devices.

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Intrinsic Gaps in Bilayer and Trilayer GrapheneChun Ning Lau, University of California-Riverside, DMR 0748910 • Intellectual Merit • Measures electrical properties of bilayer and trilayer graphene devices. • Devices are suspended with top and back gates (top figure) • At the charge neutrality point, bilayer graphene is insulating, with a gap of ~ 2 meV (dark blue area in bottom figure) • The gap arises from spontaneous symmetry-breaking, a process that gives particles mass in high energy physics (i.e. Higgs bosons). • The gap can be manipulated by electric field, charge density and magnetic field. • We find that ABC-stacked trilayer graphene are insulating with ~ 6meV gap, but but ones with ABA-stacking order are metallic.

  2. Intrinsic Gaps in Bilayer and Trilayer GrapheneChun Ning Lau, University of California-Riverside, DMR 0748910 • Technological Implications • Could enable novel, low dissipation electronics based on intrinsic gaps in bilayer and trilayer graphene • Stacking order is another route for tuning electrical properties of few-layer graphene • Outreach Activities • Speaker at in USC Workshops for High School Teachers • Speaker at KITP Teachers’ Conf. • Mentoring 5 undergraduate students • Involving a high school student in research • Selected publications • J. Velasco Jr., L. Jing, W. Bao, Y. Lee, V. Aji, M. Bockrath, C.N. Lau, C. Varma, R. Stillwell , D. Smirnov, Fan Zhang, A. MacDonald, “Transport Spectroscopy of Symmetry-Broken Insulating States in Bilayer Graphene”, Nature Nanotechnology, 7, 156 (2012). • W. Bao, J. Velasco Jr., F. Zhang, L. Jing, B. Standley, D. Smirnov, M. Bockrath, A. MacDonald and C. N. Lau, “Evidence for a Spontaneous Gapped State in Ultra-Clean Bilayer Graphene”, Proc. Nat. Acad. Sci., 109, 10802 (2012). • W. Bao, L. Jing, J. Velasco Jr., Y. Lee, G. Liu, D. Tran, B. Standley, M. Aykol, S. B. Cronin, D. Smirnov, M. Koshino, E. McCann, M. Bockrath, C.N. Lau, “Stacking-dependent Band Gap and Quantum Transport in Trilayer graphene”, Nature Physics, 7, 948 (2011).

More Related