1 / 11

EE235 Carbon Nanotube Flash Memory Devices

EE235 Carbon Nanotube Flash Memory Devices. Volker Sorger. Motivation. Symptom. Source. Robert Chau et. al, Intel Novel-Device-Group, IEEE Nanotech. 2005 . G.; Fazio, A.; Mills, D.; Reaves B. Intel Technology J. Q4’97. Memories for Mobility. Non-volatile = low power needed

karsen
Download Presentation

EE235 Carbon Nanotube Flash Memory Devices

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. EE235Carbon Nanotube Flash Memory Devices Volker Sorger

  2. Motivation Symptom Source Robert Chau et. al, Intel Novel-Device-Group,IEEE Nanotech.2005 G.; Fazio, A.; Mills, D.; Reaves B.Intel Technology J.Q4’97

  3. Memories for Mobility • Non-volatile = low power needed • power down to save power • Low cost • one memory for program & data storage • ≠magnetic hard disk • Small form factor & light in weight

  4. Future Perspectives of Non-volatile Memory

  5. CNT- Memory - Nanocrystals tox=5nm Id ‘1’ ‘0’ Vg Fit to  t=800s @ 300K Y. Zhang, APL, 2005

  6. CNT- Memory – Si/SiO2 interface traps M. Radosavljevic, Nano Lett., 2002 Lack the ability to engineer Device parameters

  7. CNT Molecular Memory • Idea similar to floating gate Flash memory Control Gate Gate Oxide Floating gate tox~ 9 nm Vsd~ 5 – 8 V S D = ‘hot’ electrons Control gate, Vp ~ 8V S D Vsd= 0 V Vp = 1 – 4 V Control Gate Low static & dynamic Power

  8. Reversible switching & Multi-bit Programming

  9. Single electron discharging @ 4.2 K APL 82, 1787 (2003)

  10. charge dot (Rdot) Pd Pd CNT SiO2 p++ Si Results  Sensitivity 0e 1e 2e Channel conductance vs. the gate voltage dCNT~1.0nm, Lch=200nm, tbot=110nm, Rdot=0.3nm, Qdot=0,1e,2e Vsd=0, VG=0.2V • Collaboration with • Y. Zhang – Intel • Jing Guo - Florida U. Vth  0.28V per electron

  11. Conclusion • Multi-bit programmable • Single electron sensitivity at low T • Low power consumption • Integration (?) ~~~ Thank you for you attention ~~~

More Related