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E QW(4nm) = 2.81*[1+(3/4)] -1 = 3.381 E QW(16nm)= 2.81*[1+(1/16)] -1 = 3.652 QB 厚度增加 → QW 電場上升

E QW(4nm) = 2.81*[1+(3/4)] -1 = 3.381 E QW(16nm)= 2.81*[1+(1/16)] -1 = 3.652 QB 厚度增加 → QW 電場上升 E QB(4nm) = -2.81*[ 1 +(4/3)] - 1 = -1.2042 E QB(16nm ) = -2.81*[1 +(16/3 )] -1 = -0.4436 QB 厚度增加 → QB 電場減少.

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E QW(4nm) = 2.81*[1+(3/4)] -1 = 3.381 E QW(16nm)= 2.81*[1+(1/16)] -1 = 3.652 QB 厚度增加 → QW 電場上升

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  1. EQW(4nm)= 2.81*[1+(3/4)]-1 = 3.381 EQW(16nm)= 2.81*[1+(1/16)]-1= 3.652 QB厚度增加→QW電場上升 EQB(4nm)= -2.81*[1+(4/3)]-1 = -1.2042 EQB(16nm)= -2.81*[1+(16/3)]-1 = -0.4436 QB厚度增加→QB電場減少

  2. 較薄的QB厚度有較薄的QW位勢差，載子經過QW時動能會較小，較小動能意味著電子在QW被電洞捕捉的機會比較高，也就是說leakage較少droop會降低較薄的QB厚度有較薄的QW位勢差，載子經過QW時動能會較小，較小動能意味著電子在QW被電洞捕捉的機會比較高，也就是說leakage較少droop會降低

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