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Production of nano-thin graphite films by CVD A.N. Obraztsov 1,2 * , A.V. Tyurnina 2 , E.A. Obraztsova 2 , A.A. Zolotukhin 2 , K.N. Eltsov 3 , B.V. Andryushechkin 3 1 University of Joensuu, Joensuu 801101, Finland 2 Moscow State University, Moscow 119992, Russia
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Production of nano-thin graphite films by CVD A.N. Obraztsov1,2 *, A.V. Tyurnina2, E.A. Obraztsova2, A.A. Zolotukhin2, K.N. Eltsov3, B.V. Andryushechkin3 1 University of Joensuu, Joensuu 801101, Finland 2 Moscow State University, Moscow 119992, Russia 3 General Physics Institute, Moscow 119991, Russia ABSTRACT Nanometrically thin graphite films were obtained on Ni substrates by chemical vapor deposition in DC plasma activated mixture of hydrogen and methane. The graphene layers in the film conformed the substrate surface except ridges of a few tens nanometers in height. The STM study shown an atomically smooth graphite surface with a typical hexagonal order in between the ridges. The supposed origin of the ridges is the difference in thermal expansion of nickel and graphite at CVD growth process. The film thickness is estimated to be in the range of 1 to 10 nm using Auger and Raman spectroscopy analysis.
CVD process (carbon vapor deposition) CH4 900 – 1100 ºC
SEM images of films deposited on Si (a) and Ni (b, c) substrates with identical conditions of CVD process. The image (c) obtained with sample tilt of 75°.
STM images of surface of graphite film grown on Ni corresponding to atomic arrangement of ideal graphite single crystal (a) and with graphene layers stacking fault producing the moiré (b).
Raman spectra of CVD films obtained on Si (curve 1) and Ni (curve 2) substrates. Spectrum 1 is presented after subtraction of PL.
Schematic presentation of three stages in deposition process of graphite film on Ni substrate
FCC HCP FCC HCP