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Chapter 2

Chapter 2. MOS Transistor Theory. NMOS Operation Region. Transistor.  n =2 P. I-V Curve of MOS. Intrinsic MOS Capacitance. C O =WLC ox. Diffusion Capacitance. C sb =AS*C jbs +PS*C jbssw. In SPICE, simulator will extract AS,AD,PS,PD parameters

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Chapter 2

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  1. Chapter 2 MOS Transistor Theory

  2. NMOS Operation Region

  3. Transistor n=2P

  4. I-V Curve of MOS

  5. Intrinsic MOS Capacitance CO=WLCox

  6. Diffusion Capacitance Csb=AS*Cjbs+PS*Cjbssw In SPICE, simulator will extract AS,AD,PS,PD parameters to calculate the diffusion capacitance of each MOS.

  7. Non-ideal I-V Effects

  8. Channel Length Modulation

  9. Body Effect Body effect coefficient For example If Vsb=1.1 V, then Vt=0.68 V HW: Exercise 2.6

  10. Junction Leakage ID= IS[eVD/vt -1]

  11. Gate leakage

  12. Temperature Dependence In SPICE, all the simulations should pass all the spec. temperature, for example, -40~120C.

  13. Inverter DC Characteristic C: PMOS and NMOS all in the saturation region

  14. Beta Ratio Beta ratio>1 =HI-skewed Beta ratio=1 =Unskewed Beta ratio<1 =LO-skewed

  15. Noise Margin

  16. Ratioed Inverter

  17. Pseudo-nMOS Inverter

  18. Some Issues HW: Exercise 2.21 & 2.22

  19. Tristate Inverter Charge sharing effects

  20. RC Circuit Model

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