520 likes | 703 Views
Wireless Power Supply & Data Link for Biomedical Applications. Supervisor Dr. Adnan Harb Student Name: ID#: Abeer Youssef 199903963 Amna Rashid 980722662 Maryam Khamis 200002184 Samar Ali 200105345 Committee Members Dr. Ali Assi Dr. Mawahib Sulieman
E N D
Wireless Power Supply & Data Link for Biomedical Applications Supervisor Dr. Adnan Harb Student Name: ID#: Abeer Youssef 199903963 Amna Rashid 980722662 Maryam Khamis 200002184 Samar Ali 200105345 Committee Members Dr. Ali Assi Dr. Mawahib Sulieman Dr. Abdulrazag Zekri 25th May, 2006
Presenation Outline • Introduction • Project Description • Project Objectives • Theoretical Background • Procedure & Results • Standards • Safety Standards • Social Impact & Environmental Effects • Cost Estimation • Conclusion & Recommendations
Introduction • Biomedical Engineering • Biomedical engineeringis a discipline that advances knowledge in engineering, biology and medicine, and improves human health through cross-disciplinary activities that integrate the engineering sciences with the biomedical sciences and clinical practice. • Started in 1800s (electrophysiology / X-Ray) • Biomedical Applications
Introduction • Why Wireless Power Supply? • Implantable Biomedical Microchip devices need power supply; however, it's neither practical nor healthy to provide that supply using traditional methods such as: • Batteries • Surgery Required to Replace Batteries • Charging Plugs • Skin Infection • Alternative: Wireless Power Supply
Project Description • Transmitter: • Digital Data Modulating Signal • AC Power Signal • Transmitted By: • Inductive Coils • Antennas • Receiver: • Data • Power
Project Objectives • Design and Characterize a CMOS Microchip for power and data link • The design includes: • Voltage Rectifier. • Voltage regulator. • Demodulator. • The chip will be implemented using Synopsys EDA NEW tool (CosmosSE) • Prepare CosmosSE Tutorial for Students.
Source Gate Drain Theoretical Background • MOS Technology • Type of MOS Transistors: • NMOS • PMOS • CMOS Technology Principles • Analog CMOS Applications • Analog Switches – Analog Multiplexers – DACs - ADCs • Digital CMOS Applications • ASICs – Microprocessors - Memories
Theoretical Background • CMOS Inverter • Inverter Basics • Inverter Function • Inverter Operation
Theoretical Background • Voltage Rectifier • Definition electrical Device comprising on or more diodes arranged for converting alternating current (AC) to direct current (DC). • Half Wave Rectifier • Full Wave Rectifier • Smoothing (Filtering) Circuits
Theoretical Background • Full Wave Voltage Doubler Advantages ( full utilization of the transformer's capability) Disadvantages of full wave voltage doublers (To achieve acceptable voltage regulation)
RC Circuits RC circuits are among the most useful, simple and robust passive electric circuits, and play integral roles in everyday equipment such as traffic lights, pacemakers and audio equipment. An RC circuit contains of a resistor and capacitor (RC Circuit) Time constant τ = RC
Theoretical Background • Current Mirror Principles • Power Dissipation in Microelectronics • dynamic switching power • (due to the charging and discharging circuit capacitances), • leakage current power • (from reverse-biased diodes and sub-threshold conduction), • Short-circuit current power • (due to finite signal rise/fall times) • Static biasing power.
Two components of power dissipation in CMOS circuits will be considered: 1. Static power 2. Dynamic power Static Power Dissipation (Analog Circuits) It is due mainly to biasing current of analog circuits and to any static current in analog or digital circuit. Dynamic Power Dissipation (Digital Circuits) Charging and discharging capacitive loads (for example gate capacitance). Direct path or short circuit current (switching transient). Ptotal = Ps + Pd + Pshort-circuit
Temperature Effects on Semiconductor Devices Performance There are several factors that determine the operating temperature limit of a semiconductor device they are: • The properties of the basic semiconductor material (Si, GaAs, SiC, ...). • The type of device (diode, bipolar transistor, field-effect transistor, ...). • The design of the device (materials, geometry and dimensions). • The materials and designs of the contacts and interconnections. • The assembly and packaging techniques and materials. • The type of circuit in which the device is used (analog or digital) and the circuit design. • What is meant by "operating temperature limit" and the particular application. • How long the device needs to operate at the extreme temperature.
Design Review (Power Supply System Design)
Mixer Implementation The idea was to create a mixer that multiplies the digital signal with the analog signal and create the model using HSPICE Simulation syntax.
(Mixer Test Bench) (Mixer Properties Window) Mixer Implementation
Mixer Simulation & Results Mixer output
(The current path in positive half cycle) Voltage Rectifier Design & Simulation The voltage rectifier converts the AC signal to DC through a full wave rectifier to minimize the power loss. (Rectifier Input and Output) (The current path in negative half cycle)
(Rectifier Test Bench) (Rectifier Schematic) Voltage Rectifier Simulation& Results
(Rectifier output: C=3nF, R=3KΩ) (Rectifier output: C=1nF, R=100KΩ) Voltage Rectifier Simulation& Results
(Demodulator Circuit Schematic) Demodulator Design& Simulation The function of the demodulator is to extracts the digital information mounted on the power signal (carrier signal) and passes it to the implant.
(Demodulator Test Bench) Demodulator Design& Simulation (Pulse Generator Properties)
Demodulator Design & Simulation The HSPICE model library was viewed to check the threshold voltage value for each MOS type; the NMOS threshold value was found to be 0.3959 volts, while the PMOS threshold was -0.3630 Volts. The model library was also checked for the transistor length and width ranges. The values are shown in (Transistor Model Limitations)
Demodulator Simulation Demodulator Parameters
(Digital Signal Improvment) Demodulator Simulation
(Demodulator in The Real System Test Bench) Demodulator & Rectifier Simulation
(Output of Demodulator and Rectifier) Demodulator & Rectifier Simulation The system simulation was run for rectifier values of (R= 3KΩ , C= 3nF)
(output with C= 0.1n, R= 50K) Demodulator & Rectifier Simulation
(Rectifier output: C= 10pF, R=50KΩ) Rectifier Modification The rectifier parameters where changed to obtain a DC signal with sharp digitized ripples.
(output after the Rectifier modification) Rectifier: C= 10p, Rout= 50K, Demodulator: C= 1p, R= 10K Demodulator & Rectifier Simulation
(Demodulator Output) Rectifier: C= 10p, Rout= 50K, Demodulator: C= 20p, R= 50K Demodulator & Rectifier Simulation
b a Procedure & Results (Voltage Regulator) • Voltage Regulator Operation • Schematic In CosmosSE
Procedure & Results (Voltage Regulator) • Transistor Sizing Criteria • Voltage Regulator Simulation
Procedure & Results (Voltage Regulator) • Voltage Regulator Final Results • Output Voltage for 2.2V input was 1.4 Volts
Procedure & Results (Overall System) • System Schematic & Simulation
Procedure & Results (Overall System) • Demodulator Modification & Final Results
Procedure & Results (Overall System) • Voltage Regulator Modification & Final Results
Procedure & Results (Overall System) • Regulator Final Output • Final System Output
Procedure & Results (Characterization) • Temperature Effects: • Simulation Temperature • Default: 25oC • Simulate the System For: • 32oC: Minimum Human Body Temperature • 37oC: Normal Body Temperature • 42oC: Maximum Human Body Temperature • Simulation Results:
Procedure & Results (Characterization) • Load Effects: • Minimum Accepted Load: 120kΩ • Maximum Accepted Load: 20kΩ • Simulation Results:
Procedure & Results (Efficiency) • Efficiency Calculation: • Output Power Calculation • Input Power Calculation • Input current to the system is unavailable • Voltage Regulator Equivalent Resistance is unknown • Solution: Calculate the current in the V.R.
Procedure & Results (Efficiency) • Current Calculation: • Using the Final Values of R , w and l • Input Power Calculation: • Input Power = 159.125μW • Efficiency = 38.4169% (Low) • For Further Load Calculation: • Input Power is Constant as Approximated Before. • Output power depends on the Load • For Maximum Load (20kΩ), Efficiency was: 81.4%
Standards • No standards should be followed during the design phase of the project. • If the chip was Fabricated, then specific standards related to Microelectronics fabrication and safety should be considered.
Standards Clean room: A room in which the number of particles in a given volume of air, the pressure, temperature, and humidity are monitored to attain the appropriate levels of cleanliness. An air flow system must be installed to ensure that there is no accumulation of particles in the room and also to promote their downward flow.
Safety Standards • Electrical safety: equipments should be isolated from energy sources. • Chemical safety: all chemical compounds should be kept in a safe place in order to not cause any serious accident.
Social Impact & Environmental Effects • Social Impact • Biomedical Application (Health Care) • Surgery • Environmental Effects • Chip EMF Effects on Environment • Low power – Least Effect • EMF Effects on Chip Performance • For regular Cell Phones, no Direct Relation • Preferred to be away from Electric Machines • Chip is Packed, No Effect on Human Body
Cost Estimation Design Phase • Design Engineers Salary • Machines, PCs, and Laptops • EDA Tool Fabrication Phase • Wafer • Chip Fabrication • Chip Packaging • Testing
Cost Estimation • Fabrication Company: ST Microelectronics • Price: 1,182$/mm2 (15 Chips) • Estimated Chip Area: Less than 10mm2
Conclusion & Recommendations • Summary • Problems: • Connection: • the university network was down for more than 10 days in the beginning of the semester • the tool license had expired (Twice) during the semester, once at the beginning of the semester, and the next one before few days from submitting the final report.