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Application of Time-Domain Reflectometry To Detect Interconnect Failures

Application of Time-Domain Reflectometry To Detect Interconnect Failures. -Binayak Kandel. Mentors Dr. Yaw Obeng Dr. Chukwudi Okoro PML Semiconductor Electronics Division, NIST . Outlines. Introduction How far we have come? 3-D stacking and Interconnects Project Goal Procedure

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Application of Time-Domain Reflectometry To Detect Interconnect Failures

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  1. Application of Time-Domain Reflectometry To Detect Interconnect Failures -Binayak Kandel Mentors Dr. Yaw Obeng Dr. ChukwudiOkoro PML Semiconductor Electronics Division, NIST

  2. Outlines • Introduction • How far we have come? • 3-D stacking and Interconnects • Project Goal • Procedure • Conclusion

  3. How Far Have We Come? Electronic Numerical Integrator And Computer (ENIAC) -1946 • 17,468 vacuum tubes • ~1800 square feet • ~150 kW of power http://www.fi.edu/learn/case-files/eckertmauchly/team.html

  4. How Far Have We Come? Ivy Bridge Processors -2012 • 1.4 billion transistors (Tri “3-D” Transistors) • 160 mm2 die size • 50% less power consumption than its predecessor. http://www.digitaltrends.com/computing/getting-ready-to-cross-ivy-bridge-the-laymans-guide-to-intels-latest-processors/

  5. 3-D Stacking TSV Connections Advantages: • Increased portability • Increased Functionality • Increased Transmission Speed IBMs new 3D manufacturing technology

  6. Interconnects Back-End-of-Line(BEOL) • Connects individual components like transistors and capacitors Through-Silicon Via(TSV) • Vertical connections that pass through wafer or die Through-Silicon Via (TSV) ..But the reliability of these interconnects are not studied well enough 6

  7. Reliability Challenges of TSV • Void occurred at the bottom of TSV, on the connecting Cu pad due to electromigration *Y.C. Tan et al, Electromigrationperformance of Through Silicon Via (TSV) – A modeling approach **T. Frank et al, IRPS, 2011

  8. Reliability Challenges Contd…. FAILURE Rambient = 13.3xx Ω Rinitial = 26.3xx Ω Rfinal = 30.6xx Ω …How do we find out the location of these failures?

  9. Project Goal • Determine the failure locations in interconnects using Time-Domain Reflectometry (TDR)

  10. TDR • Works on the same principle as radar • TDR transmits a short rise time pulse along the conductor. • Any discontinuities in the impedance causes signal to reflect back. Discontinuities Amplitude D = Distance vρ= Velocity of Propagation T = Time Time T

  11. Why TDR (1)? • Easy and accurate to locate failures like open termination or any kind of discontinuities. Daeil et al ,Early Detection of Interconnect Degradation using RF Impedance 2008

  12. Why TDR (2)? • Non destructive method to pinpoint failures Daeil et al ,Early Detection of Interconnect Degradation using RF Impedance 2008

  13. Reliability Challenges Contd…. FAILURE Rambient = 13.3xx Ω Rinitial = 26.3xx Ω Rfinal = 30.6xx Ω …How do we find out the location of these failures in the sea of TSVs? Use TDR.

  14. My Task • Prepare sample • Learn to use LeCroyWaveExpert 100h • Take TDR measurements • Locate where failure occurred • Correlate data measured from Vector Network Analyzer (VNA) with the TDR data LeCroyWaveExpert 100h Test Sample 14 S. Vahanen et al, 3D integration activities at CERN 2010

  15. Acknowledgement • Society of Physics Students • Entire SPS and AIP Family • National Institute of Standards and Technology(NIST) • Dr. David Seiler, Dr. Yaw Obeng, Dr. ChukwudiOkoro, Dr. John SuehleDr. YaqubAfridi • Entire PML Semiconductor and Electronics Division Family • Fellow Summer Interns

  16. Thank You!

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