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Example Application of Texture: Interconnect Lifetimes. 27-750, Fall 2009 Texture, Microstructure & Anisotropy, Fall 2009 A.D. Rollett, P. Kalu. Last revised: 14 th Sept. ‘09. Example 1: Interconnect Lifetimes.
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Example Application of Texture: Interconnect Lifetimes 27-750, Fall 2009 Texture, Microstructure & Anisotropy, Fall 2009 A.D. Rollett, P. Kalu Last revised: 14th Sept. ‘09
Example 1: Interconnect Lifetimes • Thin (1 µm or less) metallic lines used in microcircuitry to connect one part of a circuit with another. • Current densities (~106 A.cm-2) are very high so that electromigration produces significant mass transport. • Failure by void accumulation often associated with grain boundaries
Interconnects provide a pathway to communicate binary signals from one device or circuit to another. Issues: - Performance - Reliability A MOS transistor (Harper and Rodbell, 1997)
Reliability: Electromigration Resistance • Promote electromigration • resistance via microstructure • control: • Strong texture • Large grain size • (Vaidya and Sinha, 1981)
Top view (111) _ _ - (111) (111) e Grain Orientation and Electromigration Voids • Special transport properties on certain lattice planes cause void faceting and spreading • Voids along interconnect direction vs. fatal voids across the linewidth Slide courtesy of X. Chu and C.L. Bauer, 1999.
Aluminum Interconnect Lifetime Stronger <111> fiber texture gives longer lifetime, i.e. more electromigration resistance H.T. Jeong et al.
References • H.T. Jeong et al., “A role of texture and orientation clustering on electromigration failure of aluminum interconnects,” ICOTOM-12, Montreal, Canada, p 1369 (1999). • D.B. Knorr, D.P. Tracy and K.P. Rodbell, “Correlation of texture with electromigration behavior in Al metallization”, Appl. Phys. Lett., 59, 3241 (1991). • D.B. Knorr, K.P. Rodbell, “The role of texture in the electromigration behavior of pure Al lines,” J. Appl. Phys., 79, 2409 (1996). • A. Gungor, K. Barmak, A.D. Rollett, C. Cabral Jr. and J.M. E. Harper, “Texture and resistivity of dilute binary Cu(Al), Cu(In), Cu(Ti), Cu(Nb), Cu(Ir) and Cu(W) alloy thin films," J. Vac. Sci. Technology, B 20(6), p 2314-2319 (Nov/Dec 2002). • Barmak K, Gungor A, Rollett AD, Cabral C, Harper JME. 2003. Texture of Cu and dilute binary Cu-alloy films: impact of annealing and solute content. Materials Science In Semiconductor Processing 6:175-84.