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D Ø Silicon Radiation Damage So Far

D Ø Silicon Radiation Damage So Far. Sergey Burdin (FNAL) for the D Ø Collaboration All Experimenters’ Meeting 8/8/2005. D Ø Silicon Detector. Fraction of disabled Silicon Modules. D Ø Silicon Detector Failure Modes. Components Failures Radiation Damage. Radiation Monitoring.

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D Ø Silicon Radiation Damage So Far

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  1. DØ Silicon Radiation Damage So Far Sergey Burdin (FNAL) for the DØ Collaboration All Experimenters’ Meeting 8/8/2005

  2. DØ Silicon Detector D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  3. D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  4. Fraction of disabled Silicon Modules DØ Silicon Detector Failure Modes • Components Failures • Radiation Damage D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  5. Radiation Monitoring • Instantaneous beam losses are measured by BLMs and FINGERS • Radiation damages to the Silicon Detector are studied using • Bias Current Measurements • Depletion Voltage Measurements • Charge Collection Efficiency • Noise at n-side D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  6. Dependence of Bias Current on Delivered Luminosity Layer 3 Layer 1 Warm-up during shutdown D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  7. John Omotani Estimate of the Radiation Dose • Description of annealing processes could be tuned using this data D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  8. Dependence of Depletion Voltage from Dose Measured at Booster 7/1/05 D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  9. Depletion Voltage: Noise at n-side 0.3 fb-1 0.3 fb-1 0.5 fb-1 0.5 fb-1 • Noise at n-side in Double Sided Double Metal sensors has abnormal behavior • To be cross-checked at the test-stand Noise (ADC counts) Noise (ADC counts) beam beam beam beam Layer 1 (DSDM) Layer 4 (DS) 1.0 fb-1 1.0 fb-1 1.0 fb-1 1.0 fb-1 beam no beam beam no beam Voltage (V) Voltage (V) Sara Lager D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  10. L3 DSDM L1 DSDM L4 DS L2 DS Change in Depletion Voltage for Different Layers Sara Lager D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  11. Depletion Voltage: Charge Collection Efficiency • HV Scan with tracks Vdepletion D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  12. Comparison of different methods • Depletion voltages measured using different methods agree D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  13. Dependence of Depletion Voltage from Delivered Luminosity • There are indications that the depletion voltage for the DSDM sensors decreases with radiation dose DSDM D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  14. Prospects for Depletion Voltage • Behavior of depletion voltage for DSDM sensors agrees with the booster measurements of the DS ladders • Assuming this agreement in future • Vdepletion~ Vmax = 150V at delivered luminosity 5—7 fb-1 D0 Radiation Damage / S. Burdin (FNAL) @ AEM

  15. Summary • We study the radiation damage using several methods • DSDM sensors have abnormal noise behavior • Within assumptions made at previous slide • We should be able to deplete the DØ silicon Layer 1 up to 5—7 fb-1 • Other silicon layers should survive longer • Lower depletions limits would reduce this range D0 Radiation Damage / S. Burdin (FNAL) @ AEM

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